SHANGHAI June 2007
MICROELERONICSCO., LTD.
SE2306
N-Channel Enhancement Mode Field Effe Transistor
Revision:A |
Featur
● VDS= 20V,ID= 6A
RDS(ON)< 37.5mΩ @ VGS=2.5V
RDS(ON)< 27.5mΩ @ VGS=4.5V
●High Power and current handing capability
●Lead free produ is acquired
●Surface Mount Package
Applications
●Load switch
●Power management
Construion
●Silicon epitaxial planer
Absolute maximum ratings (Ta=25℃)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
&plun;10
V
Drain Current-Continuous@ Current-Pulsed (te 1)
ID
6
A
IDM
25
A
Maximum Power Dissipation
PD
1.5
W
Operating Junion and Storage Temperature Range
TJ,TSTG
-55 To 150
℃
THERMAL CHARAERISTICS
Thermal Ristance,Junion-to-Ambient (te 2)
RθJA
83
℃/W
Elerical charaeristics (Ta=25℃)
Parameter
Symbol
Conditions
Min.
T.
Max.
Unit
OFF CHARAERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
20
V
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
0.8
μA
Gate-Body Leakage Current
IGSS
VGS=&plun;10V,VDS=0V
&plun;80
nA
ON CHARAERISTICS (te 3)
Gate Thrhold Voltage
VGS(th)
VDS=VGS,ID=250μA
0.45
0.65
1.2
V
Drain-Source On-State Ristance
RDS(ON)
VGS=4.5V, ID=4.5A
21
27.5
mΩ
VGS=2.5V, ID=3.5A
30
37.5
mΩ
Forward Transconduance
gFS
VDS=5V,ID=4.5A
3
S
DYNAMIC CHARAERISTICS (te4)
Input Capacitance
Clss
VDS=8V,VGS=0V, F=1.0MHz
600
PF
Output Capacitance
Coss
330
PF
Reverse Transfer Capacitance
Crss
140
PF
SWITCHING CHARAERISTICS (te 4)
Turn-on Delay Time
td(on)
VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω
10
20
nS
Turn-on Rise Time
tr
11
25
nS
Turn-Off Delay Time
td(off)
35
70
nS
Turn-Off Fall Time
tf
30
60
nS
Total Gate Charge
Qg
VDS=10V,ID=6A,
V=4.5V
10
15
nC
Gate-Source Charge
Qgs
2.3
nC
Gate-Drain Charge
Qgd
3
nC
Diode Forward Voltage (te 3)
VSD
V=0V,I=1.7A
1.2
V
SHANGHAI June 2007 MICROELERONICSCO., LTD. SE2306 N-Channel Enhancement Mode Field Effe Transistor
| |||||||||||||
Featur● VDS= 20V,ID= 6A RDS(ON)< 37.5mΩ @ VGS=2.5V RDS(ON)< 27.5mΩ @ VGS=4.5V ●High Power and current handing capability ●Lead free produ is acquired ●Surface Mount Package |
| ||||||||||||
Applications ●Load switch ●Power management | |||||||||||||
Construion ●Silicon epitaxial planer
| |||||||||||||
Absolute maximum ratings (Ta=25℃) | |||||||||||||
Parameter | Symbol | Limits | Unit | ||||||||||
Drain-Source Voltage | VDS | 20 | V | ||||||||||
Gate-Source Voltage | VGS | &plun;10 | V | ||||||||||
Drain Current-Continuous@ Current-Pulsed (te 1) | ID | 6 | A | ||||||||||
IDM | 25 | A | |||||||||||
Maximum Power Dissipation | PD | 1.5 | W | ||||||||||
Operating Junion and Storage Temperature Range | TJ,TSTG | -55 To 150 | ℃ | ||||||||||
THERMAL CHARAERISTICS | |||||||||||||
Thermal Ristance,Junion-to-Ambient (te 2) | RθJA | 83 | ℃/W | ||||||||||
Elerical charaeristics (Ta=25℃) | |||||||||||||
Parameter | Symbol | Conditions | Min. | T. | Max. | Unit | |||||||
OFF CHARAERISTICS |
|
|
|
|
|
| |||||||
Drain-Source Breakdown Voltage | BVDSS | VGS=0V ID=250μA | 20 |
|
| V | |||||||
Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V |
|
| 0.8 | μA | |||||||
Gate-Body Leakage Current | IGSS | VGS=&plun;10V,VDS=0V |
|
| &plun;80 | nA | |||||||
ON CHARAERISTICS (te 3) |
|
|
|
|
|
| |||||||
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