FDP12N60NZ / FDPF12N60NZ
N-Channel MOSFET?
600V, 12A, 0.65?
Featur
• RDS(on) = 0.53? ( T.)@ VGS = 10V, ID = 6A
• Low gate charge ( T. 26nC)
• Low Crss ( T. 12pF)
• Fast switching
• 100% avalanche tted
• Improved dv/dt capability
• D Improved capability
• RoHS compliant
Dcription
The N-Channel enhancement mode power field effect transistors
are produced using Fairchild’s proprietary, planar stripe,
DOMS technology.
This advance technology has been pecially tailored to minimize
on-state ristance, provide ior switching performance,
and withstand high energy pulse in the avalanche and
commutationmode. The devic are well suited for high efficient
switched mode power suppli and active power factor correction.
N-Channel MOSFET?
600V, 12A, 0.65?
Featur
• RDS(on) = 0.53? ( T.)@ VGS = 10V, ID = 6A
• Low gate charge ( T. 26nC)
• Low Crss ( T. 12pF)
• Fast switching
• 100% avalanche tted
• Improved dv/dt capability
• D Improved capability
• RoHS compliant
Dcription
The N-Channel enhancement mode power field effect transistors
are produced using Fairchild’s proprietary, planar stripe,
DOMS technology.
This advance technology has been pecially tailored to minimize
on-state ristance, provide ior switching performance,
and withstand high energy pulse in the avalanche and
commutationmode. The devic are well suited for high efficient
switched mode power suppli and active power factor correction.
