供应场效应管FDT457

 FDT457N
 N-Channel Enhancement Mode Field Effect Transistor                                                                
                                                                                       
General  Dcription                                                                   Featur
5 A, 30 V. RDS(ON)
 = 0.06 Ω @ VGS = 10 V                             
                 RDS(ON)
 = 0.090 Ω @ VGS = 4.5 V. 
High density cell dign for extremely low RDS(ON)
.
High power and current handling capability in a widely used
surface mount package.
The N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
procs is pecially tailored to minimize on-state ristance,
provide ior switching performance. The products are
well suited to low voltage, low current applications such as
notebook computer power management, battery powered
circuits, and DC motor control.