Description
IR5123C-112-3.6 is a infrared emitting diode in GaAlAs on GaAs technology, molded in clear, plastic packages.In comparison with the standard GaAs on GaAs technology . These emitters achieve more than 100 % radiant power improvement at a similar wavelength .The forward voltages at low current and at high pulsecurrent roughly correspond to the lowvalues of thestandardtechnology.Therefore these emitters areideally suitable as high performance replacements ofstandard emitters.
Features
ü Extra high radiant power and radiant intensity
ü Angle of Intensity &plun;30 °
ü High reliability
ü Low forward voltage
ü Suitable for high pulse current operation
ü Standard (∮5 mm) package
ü Peak wavelengthλ= 940 nm
ü Good spectral matching to Si photodetectors
ü Lead-free component
ü Component in accordance to RoHS
