供应740nm波长接收管芯片

光鋐科技股份有限公司
Epileds Technologies, Inc.
Product specification of 42 x 42 mil IR LED chip
Form No:PP-006-06(01)
1. Scope:
This specification applies to AlInGaP metal bonding 42 x 42mil IR LED chip, BN-E4242G-A3。
2. Materials：
2.1 P-pad：Au alloy。
2.2 N-pad：Au alloy。
3. Dimensions：
3.1 Chip size：1060&plun;25μm x 1060&plun;25μm。
3.2 N-pad：φ110&plun;10μm, thickness 3.5&plun;0.3μm。
3.3 Chip thickness：200μm&plun;25μm。
4. Electro-optical characteristics and specification: (Tc=25°C)
4.1 Electro-optical characteristics
Test parameter Condition Min T Max Unit
Peak welength(Wp) 700mA 740 - 800 nm
Radiant intensity(I) 700mA 40 - 165 mW/sr
Forward voltage(Vf4) 10uA 0.7 - - V
Forward voltage(Vf1) 700mA 1.4 - 2.4 V
Reverse current (Ir) -10V 0 - 2 uA
4.2 Electro-optical specification(Bin table)：
Wp I Vf1 Vf4 Ir Vz
Bin nm Bin mW (V) (V) (uA) (V)
JQ 740~~45
JS 745~~50
KA 750~~60
KC 755~~70
KE 760~~80
KG 765~~90
KI 770~~100
KK 775~~110
KM 780~~120
KO 785~~135
KQ 790~~150
KS 795~~165
1.4~2.4 0.7~ 0~2 25~
Rev.: 2/21/2013
* The detail technical and reliability datasheet are also ailable for your reference, please be free to contact us.