P-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = -30V
ID = -4.2 A (VGS = -10V)
RDS(ON) < 50mΩ (VGS = -10V)
RDS(ON) < 65mΩ (VGS = -4.5V)
RDS(ON) < 120mΩ (VGS = -2.5V)
General Description
The AO3401 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. Standard product AO3401 is Pb-free
(meets ROHS & Sony 259 specifications). AO3401L
is a Green Product ordering option. AO3401 and
AO3401L are electrically identical.
S
G
D
TO-236
(SOT-23)
View
G
D
S
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