雪崩二管

Order #

Te

Active   Area

Dark   Current

Rise Time

Chip

Package

Size

Area

M=100

410nm 50Ω

mm

mm2

nA

ns

500970

AD800-11

TO52S1

?0.8

0.5

1

1

500967

AD1900-11

TO5i

?1.95

3

5

2

Series 12:   Red sensitivity enhanced (cut-off frequency up to 3 GHz)

Order #

Te

Active   Area

Dark   Current

Rise Time

Chip

Package

Size

Area

660nm   M=100

660nm 50Ω

mm

mm2

A/W

GHz

501828

AD100-12

LCC6.1

?0.1

0.008

50

t.3,   min.2

501829

AD100-12

LCC6.1f

?0.1

0.008

44

t.3,   min.2

501831

AD100-12

TO52S1

?0.1

0.008

50

t.3,   min.2

501157

AD230-12

LCC6.1

?0.23

0.042

50

t.3,   min.2

501156

AD230-12

LCC6.1f

?0.23

0.042

44

t.3,   min.2

501820

AD230-12

LCC6.1f

?0.23

0.042

44

t.3,   min.2

501162

AD230-12

TO52S1

?0.23

0.042

50

t.3,   min.2

501155

AD500-12

LCC6.1

?0.5

0.196

50

t.3,   min.2

501154

AD500-12

LCC6.1f

?0.5

0.196

44

t.3,   min.2

501819

AD500-12

LCC6.1f

?0.5

0.196

44

t.3,   min.2

501163

AD500-12

TO52S1

?0.5

0.196

50

t.3,   min.2

Series 8:   Optimized for high cut-off frequencies-850 nm (optimized for high speeds)

Order #

Te

Active   Area

Dark   Current

Rise Time

Chip

Package

Size

Area

M=100

M=100 20V   50Ω

mm

mm2

nA

ns

501810

AD100-8

LCC6.1

?0.1

0.008

0.05

 <0.18

501811

AD100-8

LCC6.1f

?0.1

0.008

0.05

<0.18

501812

AD100-8

LCC6.1f

?0.1

0.008

0.05

<0.18

500011

AD100-8

TO52S1

?0.1

0.008

0.05

<0.18

501171

AD100-8

TO52S3

?0.1

0.008

0.05

<0.18

501078

AD230-8

LCC6.1

?0.23

0.04

0.3

0.18

501079

AD230-8

LCC6.1f

?0.23

0.04

0.3

0.18

501805

AD230-8

LCC6.1f

?0.23

0.04

0.3

0.18

500019

AD230-8

TO52S1

?0.23

0.04

0.3

0.18

500022

AD230-8

TO52S3

?0.23

0.04

0.3

0.18

501496

AD230-8

ODFN2x2

?0.23

0.04

0.3

0.18

501077

AD500-8

LCC6.1

?0.5

0.2

0.5

0.35

501076

AD500-8

LCC6.1f

?0.5

0.2

0.5

0.35

501809

AD500-8

LCC6.1f

?0.5

0.2

0.5

0.35

500030

AD500-8

TO52S1

?0.5

0.2

0.5

0.35

500305

AD500-8

TO52S2

?0.5

0.2

0.5

0.35

500155

AD500-8

TO52S3

?0.5

0.2

0.5

0.35

500947

AD800-8

TO52S1

?0.8

0.5

2

0.7

501117

AD1100-8

TO52S1

?1.13

1

4-6

1

500015

AD1900-8

TO5i

?1.95

3

15

1.4

501194

AD3000-8

TO5i

?3

7.07

30

2

500160

AD5000-8

TO8i

?5

19.63

60

3

500002

AD230-8-2.3G

TO5

AD230-8-2.3G   TO5 is a high frequency optical data receiver comprising an Avalanche Silicon   Photodiode and a transimpedance amplifier in a hermetically sealed TO5   package.

500003

AD500-8-1.3G

TO5

AD500-8-1.3G   TO5 is a high frequency optical data receiver comprising an Avalanche Silicon   Photodiode and a transimpedance amplifier in a hermetically sealed TO5   package.

Series 9:   NIR sensitivity enhanced-900nm (specifically for LIDAR and laser   rangefinders)

Order #

Te

Active   Area

Dark   Current

Rise Time

Chip

Package

Size

Area

M=100

M=100

mm

mm2

nA

ns

501815

AD100-9

LCC6.1

?0.1

0.008

0.1

<0.5

501816

AD100-9

LCC6.1f

?0.1

0.008

0.1

<0.5

501123

AD230-9

LCC6.1

?0.23

0.04

0.5

0.5

501817

AD230-9

LCC6.1f

?0.23

0.04

0.5

0.5

500020

AD230-9

TO52S1

?0.23

0.04

0.5

0.5

501265

AD230-9

TO52S1F2

?0.23

0.04

0.5

0.5

500023

AD230-9

TO52S3

?0.23

0.04

0.5

0.5

501122

AD500-9

LCC6.1

?0.5

0.2

0.8

0.55

501818

AD500-9

LCC6.1f

?0.5

0.2

0.8

0.55

500031

AD500-9

TO52S1

?0.5

0.2

0.8

0.55

500590

AD500-9

TO52S1F2

?0.5

0.2

0.8

0.55

500306

AD500-9

TO52S2

?0.5

0.2

0.8

0.55

500156

AD500-9

TO52S3

?0.5

0.2

0.8

0.55

501196

AD800-9

TO52S1

?0.8

0.5

2

0.9

501197

AD1100-9

TO52S1

?1.13

1

4

1.3

501208

AD1500-9

TO5i

?1.5

1.77

2

2

501198

AD3000-9

TO5i

?3

7.07

30

2

500161

AD5000-9

TO8i

?5

19.63

60

3

500756

AD230-9-400M

TO5

AD230-9-400M-TO5 is a high frequency optical data   receiver comprising an Avalanche Silicon Photodiode and a transimpedance   amplifier in a hermetically sealed TO-5 package.

500490

AD500-9-400M

TO5

AD500-9-400M-TO5 is a high frequency optical data   receiver comprising an Avalanche Silicon Photodiode and a transimpedance   amplifier in a hermetically sealed TO-5 package.

Multi-Element   Array

501099

8AA0.4-9

SOJ22GL

APD Array   8 Elements, QE>80% at 760-910nm with NTC

501098

16AA0.13-9

SOJ22GL

APD Array   16 Elements, QE>80% at 760-910nm with NTC

500038

16AA0.13-9

DIL18

APD Array   16 Elements, QE>80% at 760-910nm

501097

16AA0.4-9

SOJ22GL

APD Array   16 Elements, QE>80% at 760-910nm

50130802

25AA0.04-9

BGA

APD Array   25 (5×5) elements, QE>80% at 760-910nm with PTC

50130802

25AA0.16-9

BGA

APD Array   25 (5×5) elements, QE>80% at 760-910nm with PTC

50130702

64AA0.04-9

BGA

APD Array   64 (8×8) elements, QE>80% at 760-910nm with PTC

501207

QA4000-9

TO8Si

Quadrant   Avalanche Photodiode, QE>80% at 760-910nm

Series 10:   NIR sensitivity enhanced - 1064nm (specifically for laser rangefinders,   targeting systems or any applications using YAG lasers or similar NIR   radiation sources)

Order #

Te

Active   Area

Dark   Current

Rise Time

Chip

Package

Size

Area

M=100

M=100   1064nm

mm

mm2

nA

ns

500953

AD500-10

TO5i

?0.5

0.2

1.5

4

501233

AD800-10

TO5i

?0.8

0.5

3

5

500883

AD1500-10

TO5i

?1.5

1.77

7

5

50123401

AD4000-10

TO8Si

?4

12.56

50

6

501387

AD800-10

TO8S

High   speed, high gain, low noise, low power consumption hybrid (AD800-10+TIA)

Multi-Element   Array

501174

QA4000-10

TO8Si

Quadrant   Avalanche Photodiode, High QE at 850-1070nm