Frequency Range 频率范围(Fo)1,000MHz to 45.000MHzFrequency Stability 频率稳定度A=±25ppm,B=±50ppm,C=±100ppmOperating Temperature Range 工作温度范围(Topr)0°C to 70°C Storage Temperature Range 储存温度范围(Tstg)-55°C to 125°C Aging 年老化率(at 25°C )± 5ppm/year Max.Pullability(Minimum) 频率迁引范围 (at 2.5Vdc±2Vdc Positive Transfer)± 50ppm, ± 100ppm, ± 200ppmSupply Voltage 工作电压5.0VDC ±5%Input Current 输入电流(Idd)1.000MHz to 24.000MHz 30mA Max. 24.000MHz to 30.000MHz 40mA Max. 30.000MHz to 45.000MHz 50mA Max.Linearity 压控线性度±10%Output Voltage Logic High 逻辑高度输出电压(VOH) 4.5VDC MinimumOutput Voltage Logic LOW 逻辑低度输出电压(VOL)0.5VDC Max Output Symmetry 输出占空比40% ± 60% (Normal) 45% ± 50%(Tight)Rise Time/Fall Time 上升/下降时间(Tr/Tf)5nSec Max.Output TTL Load 输出TTL负载10LS TTLOutput HCMOS Load 输出HCMOS负载15pF
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项 目 符号 单位 型号 最小 条件 of kHz 32.768 25 200 频差 △f/of ppm ±20 ±5 ±100 At25℃ 温频特性 △f/of See drawing -10℃~+60℃ 拐点温度 Tm 25±5 温度频差系数 β ppm/(℃)2 -0.034±0.006 工作温度范围 Topr ℃ -10~+60 存储温度范围 Tstg ℃ -40~±85 等效串联阻抗 R1 KΩ 35 20 40 静电容 Co pF 1.35TYP 负载电容 CL pF 12.5 Please specify 动态电容 C1 pF 0.0030TYP 绝缘阻抗 IR MΩ 500 激励功率 DL μW 1 电容比率 r 450TYP 年老化率 △f/of ppm ±5.0 At25℃±3℃ 封装条件 1×10-2μPa.m3/s MAX 冲击阻力 ±5ppmMAX. Drop test of 3 times on a hard board from 75cm height or shock test of 3000G×0.3ms×1/2sin wave×3directions