单刀单掷-常开型,中断10A负载, 单刀单掷-常开+单刀单掷-常闭型中断8A负载, 紧凑:20×15×10mm(长×宽×高),低功耗:200mW,有磁通保护的或塑料密封的结构,独有的移动线圈电枢减小了继电器尺寸,磁干扰和触点弹跳.
G
G3VM-3,G3VM-61B1,G3VM
1:抗电磁干扰能强,可实现高密度安装。2:耐冲击电压1500V.FCC规格标准,实现耐高压。3:包金双接点,而且低接点振动,可以发挥高接触可靠性。4:品种齐全,用途广泛。型号: DS2E-M-3V,DS2E-M-5V,DS2E-M-12V,DS2E-M-24V,DS2E-S-3V,DS2E-S-5V,DS2E-S-12V,DS2E-S-24V,DS4E-M-3V,DS4E-M-5V,DS4E-M-12V,DS4E-M-24V,DS4E-S-3V,DS4E-S-5V,DS4E-S-12V,DS4E-S-24V
1:抗电磁干扰能强,可实现高密度安装。2:耐冲击电压1500V.FCC规格标准,实现耐高压。3:包金双接点,而且低接点振动,可以发挥高接触可靠性。4:品种齐全,用途广泛。型号: DS2E-M-3V,DS2E-M-5V,DS2E-M-12V,DS2E-M-24V,DS2E-S-3V,DS2E-S-5V,DS2E-S-12V,DS2E-S-24V,DS4E-M-3V,DS4E-M-5V,DS4E-M-12V,DS4E-M-24V,DS4E-S-3V,DS4E-S-5V,DS4E-S-12V,DS4E-S-24V