单向可控硅BT151SCRs
| 价 格： | 面议 | |
| 型号/规格： | BT151SCRs | |
| 品牌/商标： | SZGKT |
DESCRIPTION：
Passivated thyristor in a plastic envelope, intended for use in applications requiring high
bidirectional transient and blocking voltage capability and high thermal cycling perform-
ance. Typical applications include motor control, industrial and domestic lighting, heating
and static switching.
ABSOLUTE MAXIMUM RATINGS:
|
SYMBOL |
PARAMETER |
RATING |
UNIT |
|
|
VDRM VRRM |
151-500 |
500 |
V |
|
|
151-650 |
650 |
|||
|
151-800 |
800 |
|||
|
IT(RMS) |
RMS on-state current(all condition angles) |
4 |
A |
|
|
ITSM |
Non-repetitive peak on-state current (half sine wave, Tj=25℃) |
t=10ms |
35 |
A |
|
t=8.3ms |
38 |
|||
|
Tstg |
Storage junction temperature rage |
-40 to +150 |
℃ |
|
|
Tj |
Operating junction temperature rage |
-40 to +125 |
||
STATIC CHARACTERISTICS:
|
SYMBOL |
PARAMETER |
CONDITION |
MIN |
TYP |
MAX |
UNIT |
|
|
IGT |
Gate trigger current |
VD=12V, IT=0.1A |
|
10 |
50 |
uA |
|
|
VGT |
Gate trigger current |
VD=12V, IT=0.1A |
- |
0.4 |
1.5 |
V |
|
|
VD=VDRM (max), IT=0.1A, Tj=110℃ |
0.1 |
0.2 |
- |
V |
|||
|
dVD/dt |
Critical rate of rise of off-state voltage |
VD=67%VDRM (max) , Tj=125℃ exponential waveform,RGK=100Ω |
- |
50 |
- |
V/us |
|
|
tgt |
Gate controlled turn-on time |
ITM=10A, VD=VDRM (max), IG=5mA, dIG/dt=2A/us |
- |
2 |
- |
us |
|
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