乾野电子主营范围:超结MOSFET,中低压MOSFET,高压MOSFET,51单片机系列。
MOSFET的参数介绍
Parameter |
Symbol |
Limit |
Unit |
Drain-Source Voltage |
VDS |
-55 |
V |
Gate-Source Voltage |
VGS |
±20 |
V |
Drain Current-Continuous |
ID |
-30 |
A |
Drain Current-Continuous(TC=100℃) |
ID (100℃) |
-21 |
A |
Pulsed Drain Current |
IDM |
110 |
A |
Maximum Power Dissipation |
PD |
90 |
W |
Derating factor |
|
0.72 |
W/℃ |
Single pulse avalanche energy (Note 5) |
EAS |
420 |
mJ |
Parameter |
Symbol |
Condition |
Min |
Typ |
Max |
Unit |
Off Characteristics |
||||||
Drain-Source Breakdown Voltage |
BVDSS |
VGS=0V ID=-250μA |
-55 |
- |
- |
V |
Zero Gate Voltage Drain Current |
IDSS |
VDS=-55V,VGS=0V |
- |
- |
1 |
μA |
Gate-Body Leakage Current |
IGSS |
VGS=±20V,VDS=0V |
- |
- |
±100 |
nA |
On Characteristics (Note 3) |
||||||
Gate Threshold Voltage |
VGS(th) |
VDS=VGS,ID=-250μA |
-2 |
-3 |
-4 |
V |
Drain-Source On-State Resistance |
RDS(ON) |
VGS=-10V, ID=-15A |
- |
30 |
40 |
mΩ |
Forward Transconductance |
gFS |
VDS=-25V,ID=-16A |
8 |
- |
- |
S |
Dynamic Characteristics (Note4) |
为了改善前述单一MOSFET开关造成讯号失真的缺点,于是使用一个PMOS加上一个NMOS的CMOS开关成为目前最普遍的做法。CMOS开关将PMOS与NMOS的源极与漏极分别连接在一起,而基极的接法则和NMOS与PMOS的传统接法相同。当输入电压在(VDD-Vthn)和(VSS+Vthp)时,PMOS与NMOS都导通,而输入小于(VSS+Vthp)时,只有NMOS导通,输入大于(VDD-Vthn)时只有PMOS导通。这样做的好处是在大部分的输入电压下,PMOS与NMOS皆同时导通,如果任一边的导通电阻上升,则另一边的导通电阻就会下降,所以开关的电阻几乎可以保持定值,减少讯号失真。
乾野电子主营范围:超结MOSFET,中低压MOSFET,高压MOSFET,51单片机系列。 MOSFET的参数介绍 Parameter Symbol Limit Unit Drain-Source Voltage VDS -55 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -30 A Drain Current-Continuous(TC=100℃) ID (100℃) -21 A Pulsed Drain Current IDM ...
乾野电子主营范围:超结MOSFET,中低压MOSFET,高压MOSFET,51单片机系列。 MOSFET的参数介绍 Parameter Symbol Limit Unit Drain-Source Voltage VDS -55 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -30 A Drain Current-Continuous(TC=100℃) ID (100℃) -21 A Pulsed Drain Current IDM ...