乾野电子主营范围:超结MOSFET,中低压MOSFET,高压MOSFET,51单片机系列。
MOSFET的参数介绍
Parameter |
Symbol |
Limit |
Unit |
Drain-Source Voltage |
VDS |
-55 |
V |
Gate-Source Voltage |
VGS |
±20 |
V |
Drain Current-Continuous |
ID |
-30 |
A |
Drain Current-Continuous(TC=100℃) |
ID (100℃) |
-21 |
A |
Pulsed Drain Current |
IDM |
110 |
A |
Maximum Power Dissipation |
PD |
90 |
W |
Derating factor |
|
0.72 |
W/℃ |
Single pulse avalanche energy (Note 5) |
EAS |
420 |
mJ |
Parameter |
Symbol |
Condition |
Min |
Typ |
Max |
Unit |
Off Characteristics |
||||||
Drain-Source Breakdown Voltage |
BVDSS |
VGS=0V ID=-250μA |
-55 |
- |
- |
V |
Zero Gate Voltage Drain Current |
IDSS |
VDS=-55V,VGS=0V |
- |
- |
1 |
μA |
Gate-Body Leakage Current |
IGSS |
VGS=±20V,VDS=0V |
- |
- |
±100 |
nA |
On Characteristics (Note 3) |
||||||
Gate Threshold Voltage |
VGS(th) |
VDS=VGS,ID=-250μA |
-2 |
-3 |
-4 |
V |
Drain-Source On-State Resistance |
RDS(ON) |
VGS=-10V, ID=-15A |
- |
30 |
40 |
mΩ |
Forward Transconductance |
gFS |
VDS=-25V,ID=-16A |
8 |
- |
- |
S |
Dynamic Characteristics (Note4) |
在过渡层由于没有电子、空穴的自由移动,在理想状态下几乎具有绝缘特性,通常电流也难流动。但是此时漏极-源极间的电场,实际上是两个过渡层接触漏极与门极下部附近,由于漂移电场拉去的高速电子通过过渡层。因漂移电场的强度几乎不变产生ID的饱和现象。其次,VGS向负的方向变化,让VGS=VGS(off),此时过渡层大致成为覆盖全区域的状态。而且VDS的电场大部分加到过渡层上,将电子拉向漂移方向的电场,只有靠近源极的很短部分,这更使电流不能流通。
乾野电子主营范围:超结MOSFET,中低压MOSFET,高压MOSFET,51单片机系列。 MOSFET的参数介绍 Parameter Symbol Limit Unit Drain-Source Voltage VDS -55 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -30 A Drain Current-Continuous(TC=100℃) ID (100℃) -21 A Pulsed Drain Current IDM ...
乾野电子主营范围:超结MOSFET,中低压MOSFET,高压MOSFET,51单片机系列。 MOSFET的参数介绍 Parameter Symbol Limit Unit Drain-Source Voltage VDS -55 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -30 A Drain Current-Continuous(TC=100℃) ID (100℃) -21 A Pulsed Drain Current IDM ...