单向
MCR100-6 2P4M C106D EC103D1 CR3AM CR03AM 3P4MH 3P4J-Z 5P4J-Z CR5AS CR6PM
X0405MF X0605MA X0202MA P0102DA P0111DA P0118DA SF25JZ51 BT148
BT151 BT152 BT258 MCR712 MCR12D MCR25N D4020L D6020L S6015L S6025L S8035L S6055K
S8065K S2512NH S2513NH
SIPS640 TYN612 TYN616 TYN816 TYN825 TYN1225 BTW67-1000 BTW69-1000
双向
MAC97A6 BT131 BT132 BCR3AM AC03DGM Z0607MA Z0107MA
BTA06 BTA08 BTA12 BTA16 BTA20 BTA24 BTA26
BTA40 BTA41 BTB08 BTB12 BTB16 BTB24 BT134
BT136 BT137 BT138 BT139 BTA140 BTA204 BTA208 BTA212 BTA216 T106D1
AC01DJM-Z AC05DGM AC08DGM AC10FGM AC16DGM BCR5PM BCR8PM BCR16AM BCR20AM BCR30GM BCR50GM SM2GZ47
SM3JZ47 SM8JZ47 SM16JZ47 MAC228 MAC210 MAC12N MAC16N MAC223 SIPT640
T2512NH T405-600B T410-600B/800W T435-800W T830-800W TG25C60 TG35C60 TLC336A Q6015L
Q6025L TPDV1225 TPDV840 TPDV1240 Z0405MF/ME Z0409MF/ME Z0409NF
高频低噪声NPN晶硅晶体管 2SC3355参数: FEATURES: Low Noise and High GainNF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHzNF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz High Power GainMAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base VoltageVCBO=20V Collector to Emitter VoltageVCEO=12V Emitter to Base VoltageVEBO=3.0V Collector CurrentIC=100mA Total Power DissipationPT=600mW Junction TemperatureTj=150C Storage TemperatureTstg=65 to +150C
产品分类 RF/IF 和 RFID >> 射频双极小信号晶体管 描述 射频双极小信号晶体管 TAPE-7 TNS-RFSS 制造商 NXP Semiconductors 配置 Single 晶体管极性 NPN 工作频率 8000 MHz 集电极—发射极电压 VCEO 10 V 发射极 - 基极电压 VEBO 2.5 V 集电极连续电流 0.1 A 功率耗散 1000 mW 直流集电极/Base Gain hfe Min 40 工作温度 + 150 C 封装 / 箱体 SOT-223 封装 Reel - 7 in