供应DIODES场效应管MOSFET，DMN5L06TK
| 价 格： | 0.10 | |
| 型号/规格： | DMN5L06TK | |
| 品牌/商标： | DIODES | |
| 封装形式： | SOT-523 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 贴片式 | |
| 包装方式： | 盒带编带包装 | |
| 功率特征： | 大功率 |
Mechanical Data
• Case: SOT-523
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish – Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.002 grams (approximate)
- 所属城市：广东 深圳
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- 联系人： KIKI
- 电话：0755-83980422/83986354
- 传真：0755-83986417
- 手机：13760361444
- QQ ：
供应AOS美国万代低压MOS管 AO3401 AO3400 AO3402 AO3407
信息内容：Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions VDS= -30V RDS(ON), Vgs@-10V, Ids@-4.2A < 64m RDS(ON), Vgs@-4.5V, Ids@-4.0A < 75m RDS(ON), Vgs@-2.5V, Ids@-1.0A < 120mΩ Ω Ω 30V P-Channel Enhancement Mode MOSFET
安森美静电ESD二极管全系列 NUP4201MR6T1G NUP2105LT1G 保证原装
信息内容：Features 350 W Peak Power Dissipation per Line (8 x 20 sec Waveform) Low Reverse Leakage Current (< 100 nA) Low Capacitance High−Speed CAN Data Rates IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4 − IEC 61000−4−4 (EFT): 40 A – 5/50 ns − IEC 61000−4−5 (Lighting) 8.0 A (8/20 s) ISO 7637−1, Nonrepetitive EMI Surge Pulse 2, 9.5 A (1 x 50 s) ISO 7637−3, Repetitive Electrical Fast Transient (EFT) EMI Surge Pulses, 50 A (5 x 50 ns) Flammability Rating UL 94 V−0 AEC−Q101 Qualified and PPAP Capable SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements Pb−Free Packages are Available*
