价 格: | 面议 | |
应用范围: | -- | |
品牌/商标: | OMRON/欧姆龙 | |
型号/规格: | G3VM-401E(TR) | |
触点负载: | 详见附页 | |
触点切换电流: | 详见附页 | |
触点切换电压: | 详见附页 | |
触点形式: | 详见附页 | |
额定电流: | -- | |
额定电压: | -- | |
防护特征: | 详见附页 | |
线圈电源: | 详见附页 | |
线圈功率: | 详见附页 |
G3VM-401BE MOS FET继电器
最适合应用于模拟信号开关的MOSFET继电器通过光绝缘实现输入输出间耐压AC2.5kV产品也系列化。
欧姆龙MOS FET继电器g3vm-401b/e特点如下:
● 可适用于微小模拟信号的开关。
● 输出开路时漏电流在1µA以下。
● G3VM-4N系列已经改良更新。
dzsc/19/3157/19315720.jpg
dzsc/19/3157/19315720.jpg
dzsc/19/3157/19315720.jpg
dzsc/19/3157/19315720.jpg
dzsc/19/3157/19315720.jpg
dzsc/19/3157/19315720.jpg
dzsc/19/3157/19315720.jpg
dzsc/19/3157/19315720.jpg
dzsc/19/3157/19315720.jpg
G3VM-401B
G3VM-401E
G3VM-401E(TR)
G3VM-61PR MOS FET继电器 世界上最小级别的USOP封装实现低C×R=20pF·Ω的新型MOS FET继电器(Coff(标准)=20pF、Ron(标准)=1Ω) 负载电压60∨型 欧姆龙MOS FET继电器G3VM-61PR特点如下:● 抑制输出信号衰减的导通电阻=1Ω(标准)。 dzsc/19/3226/19322639.jpgdzsc/19/3226/19322639.jpgdzsc/19/3226/19322639.jpgdzsc/19/3226/19322639.jpgdzsc/19/3226/19322639.jpgdzsc/19/3226/19322639.jpgdzsc/19/3226/19322639.jpgG3VM-61PR G3VM-61PR(TR05)G3VM-61PR(TR)
Hirose/广濑 HRS接插件 基板对基板连接器 连接器FX5系列垂直连接二件式连接器Features●Two header types, low profile and high profile, are prepared according to the connecting height variation.●The connecting sequence is designed with 2 stages, which provides the end user with ease of maintenance.●The self-alignment is highly sufficient to the guide level, and the guide rib is provided to achieve easy mating.●The coplanarity of SMT soldered area secures the high accuracy of 0.1mm.●The connector is miniaturized about 30% in the mounting area, compared with conventional half pitch connectors. CharacteristicSpecificationsNo. of Positions20, 40, 52, 56, 60, 68, 80, 100, 120Current Rating(Amps)(Max.)0.5PCB Mount TypeSMT, Through-holeContact Mating Area PlatingGoldTerminal Pitch (mm)0.5, 1, 2Contact Spacing (mm)1Operating Temperature Range (degrees C)-55 to 85Connector TypeBoard mountingContact GenderFemale, Male dzsc/19/3250/19325004.jpgdzsc/19/3250/19325004.jpgdzsc/19/3250/19325004.jpg...