价 格: | 0.10 | |
总频差: | .(MHz) | |
温度频差: | (-3.5±0.8)x10-8/℃2(MHz) | |
输出阻抗: | .(kΩ) | |
调整频差: | (±5ppm,±10ppm,±20ppm)(MHz) | |
基准温度: | .(℃) | |
激励电平: | ..(mW) | |
插入损耗: | .(dB) | |
负载谐振电阻: | .(Ω) | |
标称频率: | 32.768KHz(MHz) | |
种类: | 晶振 | |
加工定制: | 否 | |
负载电容: | .(pF) | |
输入阻抗: | .(kΩ) | |
型号: | VT-200-F | |
阻带衰减: | .(dB) | |
品牌: | SEIKO/精工 | |
.: | . |
VT-200-F SSP-T7-F 长期原装SII优势供应
项目 | 记号 | 规格 | 条件 |
公称频率 | fo | 32.768KHz | |
频率容许偏差 | △f/fo | (±5ppm,±10ppm,±20ppm) | |
顶点温度 | Tp | 25℃±5℃ | |
二级温度系数 | K | (-3.5±0.8)x10-8/℃2 | |
负载容量 | CL | 4.5 to 12.5pF | |
等效电阻 | R1 | 50KΩmax. | |
激励等级 | DLmax | 1μW | |
推荐激励等级 | DL | 0.1μW | |
静电容 | Co | 0.86pF typ. | |
频率老化程度 | △f/fo | ±5ppm max. | 25℃±3℃,年 |
工作温度范围 | Tope | -10℃ to 60℃ | |
保存温度范围 | Tsto | -30℃to 70℃ |
供应富鼎全系列元件! IGBT MOS ICAP20G45EH450V±6V 8 130 Vge@4.5V20Single NTO-252AP20G45EJ450V±6V 8 130 Vge@4.5V20Single NTO-251AP20GT60SW600V±20V2.340125Single NTO-3PAP25G45EM450V±6V 8 150 Vge@4.5V2.5Single NSO-8 Strobe FlashAP25G45GEM450V±6V 8 150 Vge@4.5V2.5Single NSO-8 Strobe FlashAP26G40GEO-HF400V±6V1501Single NTSSOP-8AP28G45EM450V±6V6130 Vge@3.3V2.5Single NSO-8 Strobe FlashAP28G45GEM450V±6V6130 Vge@3.3V2.5Single NSO-8 Strobe FlashAP30G100W1000V±30V3.660208Single NTO-247AP30G120SW1200V±30V3.660208Single NTO-247AP30G120W1200V±30V3.660208Single NTO-247AP50G60SW600V±30V2.575300Single NTO-3PAP85G33W300V±30V2.185150Single NTO-247
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