价 格: | 面议 | |
品牌: | FAIRCHILD/仙童 | |
型号: | KA5M0380RYDTU | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | MOS-TPBM/三相桥 | |
封装外形: | CHIP/小型片状 | |
材料: | ALGaAS铝镓砷 | |
开启电压: | 1(V) | |
夹断电压: | 1(V) | |
跨导: | 1(μS) | |
极间电容: | 1(pF) | |
低频噪声系数: | 1(dB) | |
漏极电流: | 1(mA) | |
耗散功率: | 1(mW) |
FSC FAIRCHILD IC 半导体 电子
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Manufacturer:Fairchild Semiconductor Product Category:MOSFETs RoHS:dzsc/19/1321/19132171.jpg Details Product:General Purpose MOSFETs Configuration:Single Package / Case:TO-3P Transistor Polarity:N-Channel Drain-Source Breakdown Voltage:600 V Continuous Drain Current:23.5 A Power Dissipation:310000 mW Forward Transconductance gFS (Max / Min):22.5 S Resistance Drain-Source RDS (on):0.24 Ohm @ 10 V Typical Fall Time:170 ns Typical Rise Time:270 ns Typical Turn-Off Delay Time:200 ns Packaging:TUBE Gate-Source Breakdown Voltage: /- 30 V Maximum Operating Temperature:150 C Minimum Operating Temperature:- 55 C Type:MOSFET仙童的代理商
Manufacturer:Fairchild Semiconductor Product Category:MOSFETs RoHS:dzsc/19/1358/19135808.jpg Details Product:General Purpose MOSFETs Configuration:Single Package / Case:TO-3P Transistor Polarity:N-Channel Drain-Source Breakdown Voltage:800 V Continuous Drain Current:7 A Power Dissipation:198000 mW Resistance Drain-Source RDS (on):1.9 Ohm @ 10 V Typical Fall Time:60 ns Typical Rise Time:100 ns Typical Turn-Off Delay Time:50 ns Packaging:TUBE Gate-Source Breakdown Voltage:30 V Maximum Operating Temperature:150 C Minimum Operating Temperature:- 55 C 仙童的代理商