特价现货供应 三极管KRC101S
| 价 格： | 0.02 | |
| 品牌/商标： | KEC | |
| 型号/规格： | KRC101S | |
| 应用范围： | 开关 | |
| 功率特性： | 中功率 | |
| 频率特性： | 中频 | |
| 极性： | NPN型 | |
| 结构： | 面接触型 | |
| 材料： | 硅(Si) | |
| 封装形式： | SOT-23 | |
| 封装材料： | 树脂封装 | |
| 截止频率fT： | 100（MHz） | |
| 集电极允许电流ICM： | 150M（A） | |
| 集电极耗散功率PCM： | 200M（W） | |
| 营销方式： | 现货 | |
| 产品性质： | 热销 |
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SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
DIM MILLIMETERS
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
SOT-23
A
B
C
D
E
2.93 0.20
1.30 0.20/-0.15
0.45 0.15/-0.05
2.40 0.30/-0.20
G 1.90
H
J
K
L
M
N
0.95
0.13 0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00 0.20/-0.10
M
J
K
E
1
2 3
H
G
A
N
C
B
D
1.30 MAX
L L
P P
P 7
_
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
BIAS RESISTOR VALUES
R1
R2
COMMON
OUT
IN
TYPE NO. R1(k ) R2(k )
KRC101S 4.7 4.7
KRC102S 10 10
KRC103S 22 22
KRC104S 47 47
KRC105S 2.2 47
KRC106S 4.7 47
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage KRC101S 106S VO 50 V
Input Voltage
KRC101S
VI
20, -10
V
KRC102S 30, -10
KRC103S 40, -10
KRC104S 40, -10
KRC105S 12, -5
KRC106S 20, -5
Output Current
KRC101S 106S
IO 100 mA
Power Dissipation PD 200 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
TYPE KRC101S KRC102S KRC103S KRC104S KRC105S KRC106S
MARK NA NB NC ND NE NF Type Name
Marking
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原装现货供应长电三极管M8050 Y11
信息内容：0.625 W（Tamb=25℃）Collector currentICM : 1 ACollector-base voltageV(BR)CBO : 40 VOperating and storage junction temperature rangeTJ，Tstg: -55℃ to 150℃ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）Parameter Symbol Test conditions MIN MAX UNITCollector-base breakdown voltage V(BR)CBO Ic= 100μA ， IE=0 40 VCollector-emitter breakdown voltage V(BR)CEO* IC= 0.1mA , IB=0 25 VEmitter-base breakdown voltage V(BR)EBO IE= 100μA， IC=0 6 VCollector cut-off current ICBO VCB= 35V , IE=0 0.1 μACollector cut-off current ICEO VCE= 20V , IB=0 0.1 μAhFE(1) VCE=1V, IC=5mA 45DC current gain hFE(2) VCE=1V, IC=100mA 80 300hFE（3） VCE=1V, IC=800mA 40Collector-emitter saturation voltage VCE(sat) IC= 800mA, IB=80mA 0.5 VBase-emitter saturation voltage VBE(sat) IC=800mA, IB= 80mA 1.2 VTransition frequency f T VCE=6V, IC= 20mA , f=30MHz 150 MHz
特价现货供应 触发二极管 TMMDB3
信息内容：ST触发二极管 TMMDB3FEATURESFunctioning as a trigger diode with a fixed voltagereference, the TMMDB3 can be used in conjunctionwith triacs for simplified gate control circuitsor as a starting element in fluorescent lamp ballasts.DESCRIPTIONSymbol Parameter Value UnitITRM Repetitive peak on-state currenttp = 20 ms F= 120 Hz2 ATstgTjStorage temperature rangeOperating junction temperature range- 40 to 125 °CABSOLUTE MAXIMUM RATINGS (limiting values)
