价 格: | 面议 | |
品牌/商标: | 国产 | |
型号/规格: | S8550D | |
应用范围: | 功率 | |
材料: | 锗 | |
极性: | NPN型 | |
击穿电压VCBO: | 40(V) | |
集电极允许电流ICM: | 0.8(A) | |
截止频率fT: | 150(MHz) | |
结构: | 扩散型 | |
封装形式: | TO-92 | |
封装材料: | 金属封装 |
大量现货,欢迎来电查询!
MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -Continuous -800 mA
TJ, Tstg Junction and Storage Temperature -55-150 ℃
厂家特价直销.节能灯专用.欢迎来电咨询! MAXIMUM RATINGS (TA=25℃ unless otherwise noted)symbolparametervalueunitsVcbo Collector-Base Voltage600VVceo Collector-Emitter Voltage450VVebo Emitter-Base Voltage9VIcCollector Current-Continuous1.0APcCollector Power Dissipation12WTJJunction Temperature150℃TstgStorage Temperature-65-150℃
供应微触发单向可控硅 欢迎来电查询. QUICK REFERENCEPart Number IT(RMS)(A) VDRM/ VRRM(V) IGT(Max.)(μA) Package PackingBT150- 500R 500BT150- 600R 600BT150- 800R 4 800 200 TO-220AB 50 / Tube 200 / Bulk