价 格: | 0.50 | |
品牌/商标: | ON/安森美 | |
型号/规格: | MBT35200MT1G | |
批号: | 2010 | |
封装: | SOT23-6 | |
营销方式: | 现货 | |
产品性质: | 热销 | |
处理信号: | 数字信号 | |
制作工艺: | 半导体集成 | |
导电类型: | 双极型 | |
集成程度: | 大规模 | |
工作温度: | -40~125(℃) | |
静态功耗: | 1(mW) | |
类型: | 其他IC | |
用途: | 手机 | |
应用范围: | 放大 |
本公司主营 ON,原装进口无铅,深圳现货,欢迎来电咨询。
M74VHC1GT50DFT2G |
MBT35200MT1G |
MM3Z5V1ST1G |
NCP5005SNT1G |
NL17SZ08DFT2G |
NLAS3158MNR2G |
NLAS3699BMN1R2G |
NLAS4684FCT1G |
NLAS4684MNR2G |
NTHS5443T1G |
NTS2101PT1G |
NTS4101PT1G |
NUF2221W1T2G |
NUF4402MNT1G |
NUF8402MNT4G |
NUP5120X6T1G |
NZQA5V6XV5T1G |
NZQA6V8AXV5T1G |
原装进口无铅,深圳现货,欢迎来电咨询。MAXIMUM RATINGSRating Symbol Value UnitCollector−Emitter Voltage VCES 30 VdcCollector−Base Voltage VCBO 30 VdcEmitter−Base Voltage VEBO 10 VdcCollector Current − Continuous IC 500 mAdcTotal Device Dissipation @ TA = 25°CDerate above 25°CPD 6255.0mWmW/°CTotal Device Dissipation @ TC = 25°CDerate above 25°CPD 1.512WmW/°COperating and Storage JunctionTemperature RangeTJ, Tstg −55 to 150 °CTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction−to−Ambient R JA 200 °C/mWThermal Resistance, Junction−to−Case R JC 83.3 °C/mWStresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above the"
本公司主营ON,原装进口无铅,长期供货,欢迎来电咨询。量大价可商量,M74VHC1GT50DFT2GMBT35200MT1GMM3Z5V1ST1GNCP5005SNT1GNL17SZ08DFT2GNLAS3158MNR2GNLAS3699BMN1R2GNLAS4684FCT1GNLAS4684MNR2GNTHS5443T1GNTS2101PT1GNTS4101PT1GNUF2221W1T2GNUF4402MNT1GNUF8402MNT4GNUP5120X6T1GNZQA5V6XV5T1GNZQA6V8AXV5T1G