价 格: | 0.14 | |
品牌/商标: | 国产 | |
型号/规格: | BU102 | |
应用范围: | 放大 | |
功率特性: | 小功率 | |
频率特性: | 中频 | |
极性: | NPN型 | |
结构: | 点接触型 | |
材料: | 硅(Si) | |
封装形式: | 直插型 | |
封装材料: | 塑料封装 | |
营销方式: | 厂家直销 | |
产品性质: | 热销 |
厂家直销,长期大量供应三极管BU102,TO-92,欢迎来电咨询。
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ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified)
Parameter | Symbol | Test conditions | MIN | TYP | MAX | UNIT |
Collector-base breakdown voltage | V(BR)CBO | Ic=100μA,IE=0 | 600 |
|
| V |
Collector-emitter breakdown voltage | V(BR)CEO | Ic=1mA, IB=0 | 400 |
|
| V |
Emitter-base breakdown voltage | V(BR)EBO | IE=100μA, Ic=0 | 9 |
|
| V |
Collector cut-off current | ICBO | VCB=600V, lE=0 |
|
| 1 | mA |
Collector cut-off current | ICEO | VCB=400V, IB=0 |
|
| 0.5 | mA |
Emitter cut-off current | IEBO | VEB=6V, Ic=0 |
|
| 1 | mA |
DC current gain | hFE(1) | VCE=5V, lc=200mA | 15 |
| 35 |
|
Collector-emitter saturation voltage | VCE(sat) | Ic=200mA,lB=40mA |
|
| 0.5 | V |
Base-emitter daturation voltage | VBE(sat) | Ic=200mA,lB=40mA |
|
| 1.2 | V |
Storage time | tS | Ic=0.1A, (UI9600) | 2.0 |
| 6.0 | μS |
Transition frequency | fT | VCE=10V,lc=100mA,f=1MHZ | 5 |
|
| MHZ |
CLASSIFICATION OFhFE(1)
Range | 15-20 | 20-25 | 25-30 |