原装现货 NCE05N60L TO-251S
| 价 格： | 0.10 | |
| 封装外形： | CHIP/小型片状 | |
| 型号/规格： | NCE05N60L | |
| 材料： | N-FET硅N沟道 | |
| 用途： | MOS-INM/独立组件 | |
| 品牌/商标： | NCE | |
| 沟道类型： | N沟道 | |
| 种类： | 绝缘栅(MOSFET) | |
| 导电方式： | 增强型 |
Features:
New technology for high voltage device
Low on-resistance and low conduction losses
Samll package
Ultra Low Gate Charge cause lower driving requiremenrs
100% Aualanche tested
Rohs compliant
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仙童原装三极管 FAN6753MY
信息内容：Features High-Voltage Startup Low Operating Current: 2.7mA Adaptive Decreasing PWM Frequency to 22KHz Built-in Full-Range Frequency Hopping to ReduceEMI Emission Fixed PWM Frequency: 65KHz Peak-Current-Mode Control Cycle-by-Cycle Current Limiting Leading-Edge Blanking (LEB) Synchronized Slope Compensation Internal Auto-Recovery Open-Loop Protection GATE Output Maximum Voltage Clamp: 18V VDD Under-Voltage Lockout (UVLO) VDD Over-Voltage Protection (OVP), Auto Recovery / Latch for Option Internal Auto-Recovery Sense Short-CircuitProtection for Option Constant Power Limit (Full AC Input Range) Internal OTP Sensor with Hysteresis Built-in 5ms Soft-Start Function Built-in LATCH Pin Pull HIGH (> 5.2V)
UTC（台湾友顺）特价热销 UTM2513
信息内容：FEATURES* RDS(ON) = 10.5mΩ(typ.) @VGS = 10 V* RDS(ON) = 16mΩ(typ.) @VGS = 4.5 V* Low capacitance* Optimized gate charge* Fast switching capability* Avalanche energy specified
