价 格: | 面议 | |
封装外形: | SMD(SO)/表面封装 | |
型号/规格: | RJK0365DPA,QFN-8 5*6/WPAK,SMD/MOS,N场,30V,30A,0.0091Ω | |
材料: | N-FET硅N沟道 | |
用途: | S/开关 | |
品牌/商标: | RENESAS/瑞萨 | |
沟道类型: | N沟道 | |
种类: | 绝缘栅(MOSFET) | |
导电方式: | 增强型 |
产品型号:RJK0365DPA
特点
* 高速开关
* 可4.5 V栅极驱动器
* 低驱动电流
* 高密度安装
* 低导通电阻RDS(ON)= 7.0mΩ TYP.(VGS=10V)
* 无铅
封装:QFN-8 5*6/WPAK
源漏极间雪崩电压V(br)dss(V):30
夹断电压VGS(V):±20
漏极电流Id(A):30
源漏极导通电阻rDS(on)(Ω):0.0091 @VGS = 10 V
开启电压VGS(TH)(V):2.5
功率PD(W):30
输入电容Ciss(PF):1180 typ.
通道极性:N沟道
低频跨导gFS(s):60
单脉冲雪崩能量EAR(mJ):14.4
导通延迟时间Td(on)(ns):5.4 typ.
上升时间Tr(ns):4 typ.
关断延迟时间Td(off)(ns):34 typ.
下降时间Tf(ns):4.3 typ.
温度(℃): -55 ~150
描述:30V,30A N-沟道增强型场效应晶体管
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产品型号:KIA1404A1. 特点 * 无铅 * 低RDS(ON),以限度地减少导电损耗 * 低栅极变化快速开关应用 * 的BVDSS能力2. 应用 * 电源 * DC-DC转换器封装:TO-220源漏极间雪崩电压V(br)dss(V):40漏极电流Id(A):164源漏极导通电阻rDS(on)(Ω):0.004 @VGS = 10 V开启电压VGS(TH)(V):4输入电容Ciss(PF):4037 typ.通道极性:N沟道单脉冲雪崩能量EAS(mJ):630导通延迟时间Td(on)(ns):16 typ.上升时间Tr(ns):61 typ.关断延迟时间Td(off)(ns):46 typ.下降时间Tf(ns):27 typ.温度(℃): -55 ~150描述:40V,164A,0.004Ω N-沟道增强型场效应晶体管"
BUK9209-40B,SOT-252,NXP/恩智浦,SMD/MOS,N场,40V,99A,0.007Ω<友情提示>具体价格视当天市场行情而定.买家请通过电话或贸易通在线联系,以确定当日市场价格。以免造成双方的误会与纠纷,谢谢您!全新!价格优惠!现货供应!MOS管,广泛应用于电池充电器,普通电源,智能开关电源,灯具功率开关,LED,车载,玩具,电动车,电脑主板.PHILIPS/NXP MOSFET场效应管系列:BUK9209-40B,SOT-252,NXP/恩智浦,SMD/MOS,N场,40V,99A,0.007ΩPHB87N03LT,SOT-263,NXP/恩智浦,SMD/MOS,N场,25V,75A,0.0095ΩBUK7L06-34ARC TO-220 NXP/恩智浦 DIP/MOS N场 34V 147A 0.005ΩBUK7L11-34ARC TO-220 NXP/恩智浦 DIP/MOS N场 34V 80A 0.011ΩBUK109,PHB96NQ03 ,PHP160NQ08,PHB50N03,PHD78NQ03PHP14NQ20,PHB55N03,PSMN025-100,PHD3055,PHD45N03PSMN010-55,PHP45N03,PHD78NQ03LT ,PHP33NQ20TPHP9NQ20,BUK481,PHD37N06,PHD55N03,PHD98N03PHP98N03,BUK7524,PHB69N03,PHB95N03LTA,PHB96NQ03LTPHB98N03,PHP108NQ03,PHP55N03,PHP78NQ03,BUK9510PHP45N03LTA,PHP52N06T,PHX7NQ60,PH5330,PHB50N03LTPHD101NQ03,PHD63NQ03,PHB45N03,PHB83N03,PHB95N03BUK752R7-30B,TO-220,30V,2...