价 格: | 3.00 | |
品牌: | INFINEON/英飞凌 | |
型号: | 2N03L03 | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | MOS-FBM/全桥组件 | |
封装外形: | SMD(SO)/表面封装 | |
材料: | N-FET硅N沟道 | |
开启电压: | 30(V) | |
夹断电压: | 30(V) | |
低频跨导: | 24(μS) | |
极间电容: | 24(pF) | |
低频噪声系数: | 24(dB) | |
漏极电流: | 500(mA) | |
耗散功率: | 500(mW) |
场效应管2N03L03场效应管2N03L03场效应管2N03L03场效应管2N03L03场效应管2N03L03场效应管2N03L03
供应场效应STD70NH02LT4供应场效应STD70NH02LT4供应场效应STD70NH02LT4供应场效应STD70NH02LT4供应场效应STD70NH02LT4供应场效应STD70NH02LT4供应场效应STD70NH02LT4供应场效应STD70NH02LT4供应场效应STD70NH02LT4供应场效应STD70NH02LT4供应场效应STD70NH02LT4供应场效应STD70NH02LT4供应场效应STD70NH02LT4供应场效应STD70NH02LT4
场效应管IPB011N04NG场效应管IPB011N04NG场效应管IPB011N04NG场效应管IPB011N04NG场效应管IPB011N04NG场效应管IPB011N04NG场效应管IPB011N04NG场效应管IPB011N04NG