| 价 格: | 面议 | |
| 品牌/商标: | 其他 | |
| 型号/规格: | SVF10N65F | |
| 种类: | 绝缘栅(MOSFET) | |
| 沟道类型: | N沟道 | |
| 导电方式: | 增强型 | |
| 开启电压: | 0(V) | |
| 夹断电压: | 0(V) | |
| 跨导: | 0(μS) | |
| 极间电容: | 0(pF) | |
| 低频噪声系数: | 0(dB) | |
| 漏极电流: | 0(mA) | |
| 耗散功率: | 0(mW) |
Full Production F-cell TO-220F-3L High Voltage 650 30 10 50 1000 4 1143.2 3.5 19.78 5.58 33.3 55.2
| SVF10N65F | Full Production | F-cell | TO-220F-3L | High Voltage | 650 | 30 | 10 | 50 | 1000 | 4 | 1143.2 | 3.5 | 19.78 | 5.58 | 33.3 | 55.2 |
| SVF10N65F | Full Production | F-cell | TO-220F-3L | High Voltage | 650 | 30 | 10 | 50 | 1000 | 4 | 1143.2 | 3.5 | 19.78 | 5.58 | 33.3 | 55.2 |
Full Production F-cell TO-220F-3L High Voltage 500 30 5 42 1500 4 479 2.2 9.1 3.1 15.3 22.2 SVF830FFull ProductionF-cellTO-220F-3LHigh Voltage50030542150044792.29.13.115.322.2SVF830FFull ProductionF-cellTO-220F-3LHigh Voltage50030542150044792.29.13.115.322.2
现货供应全新场效应管,质量保证,现货,有实力的公司可以月结。N沟道增强型高压功率MOS场效应晶体管采用平面VDMOS工艺技术制造。先进的工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。该产品可广泛应用于AC-DC开关电源,DC-DC电源转换器2N7002nowSOT23SingleNNoNo60±20200MA2N7002nowSOT23SingleNNoNo60±20200MA2N7002nowSOT23SingleNNoNo60±20200MA"