价 格: | 面议 | |
产品类型: | 触发二极管 | |
品牌/商标: | 国产 | |
型号/规格: | DB3 | |
结构: | 点接触型 | |
材料: | 铝(Al) | |
封装形式: | DO-35 | |
封装材料: | 玻璃封装 | |
功率特性: | 小功率 | |
频率特性: | 低频 | |
反向电压VR: | 40(V) | |
正向直流电流IF: | 2(A) |
产品主要用于节能灯、电子变压器、调光台灯及其它电子产品的触发回路。
DB3SILICON BIDIRECTIONAL DIACSThe glass passivated, three-layer, two terminal, axial lead,hermetically sealed diacs are designed specifically for
triggering thyristors. They demonstrate low breakovercurrent at breakover voltage as they withstand peak pulsecurrent. These diacs are intended for use in thyristor phasecontrol, circuits for lamp-dimming, universal-motor speedcontrols, and heat controls.
Absolute Maximum Ratings (Ta= 25OC)
Parameter Symbol Value Unit
Power Dissipation (Ta= 65 OC) Ptot 150 mW
Repetitive Peak On-state Current (tp = 20 μs, f = 100 H ITRM 2 A
Operating Junction and Storage Temperature Range Tj,Tstg - 40 to 125 OC
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供应微触发单向可控硅 欢迎来电查询. 适用范围广泛应用于交流电的开关;交直流电源变换;工业和家庭电加热控制;电机调速等。1.内部芯片采用NPNP四层结构的硅单向器件。2.台面玻璃钝化、多层金属电极工艺。3.单面台面结构,具有门极灵敏触发,耐电流冲击能力强,低维持电流,高低温特性可靠。
厂家特价直销.欢迎来电咨询! FEATURESPower dissipationPCM: 0.75 W (Tamb=25℃)Collector current ICM: 0.2 A Collector-base voltageV(BR)CBO: 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to 150℃