| 价 格: | 面议 | |
| 品牌/商标: | FAIRCHILD/仙童 | |
| 型号/规格: | FQP33N10 | |
| 种类: | 绝缘栅(MOSFET) | |
| 沟道类型: | N沟道 | |
| 导电方式: | 增强型 | |
| 用途: | DC/直流 | |
| 封装外形: | CER-DIP/陶瓷直插 | |
| 材料: | N-FET硅N沟道 | |
| 开启电压: | 4(V) | |
| 跨导: | 22000(μS) | |
| 极间电容: | 1500(pF) | |
| 漏极电流: | 33000(mA) | |
| 耗散功率: | 127000(mW) |
33A, 100V, RDS(on) = 0.052Ω @VGS = 10 V
封装形式:TO-220
工作温度范围:-55 ~ 175°
"
800V的N沟道MOSFETFeatures• 1.5A, 800V, RDS(on) = 6.3Ω @VGS = 10 V• Low gate charge ( typical 12 nC)• Low Crss ( typical 5.5 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability
Features• 27A, 100V, RDS(on) = 0.039Ω @VGS = 10 V• Low gate charge ( typical 48 nC)• Low Crss ( typical 85 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• 175°C maximum junction temperature rating"