价 格: | 面议 | |
品牌: | INFINEON/英飞凌 | |
型号: | IKW15T120 | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | NF/音频(低频) | |
封装外形: | CER-DIP/陶瓷直插 | |
材料: | SIT静电感应 | |
开启电压: | 1(V) | |
夹断电压: | 1(V) | |
跨导: | 1(μS) | |
极间电容: | 1(pF) | |
低频噪声系数: | 1(dB) | |
漏极电流: | 1(mA) | |
耗散功率: | 1(mW) |
经营仙童、IR、ST、ON、全系列IC,MOS管,IGBT管,二三极管,SPM模块等系列产品.
Manufacturer:Fairchild Semiconductor Product Category:Bipolar Transistors RoHS:dzsc/19/0576/19057657.jpg Details Product:Bipolar Small Signal & Power Transistor Polarity:NPN Package / Case:TO-220F Configuration:Single Maximum Operating Frequency:15 MHz (Typ) Collector- Emitter Voltage VCEO Max:800 V Emitter- Base Voltage VEBO:7 V Maximum DC Collector Current:3 A Power Dissipation:40000 mW DC Current Gain hFE Min:15 @ 200mA @ 5V Packaging:TUBE Continuous Collector Current:5 A Maximum Operating Temperature:150 C仙童的代理商"
Manufacturer:Fairchild Semiconductor Product Category:MOSFETs RoHS:dzsc/19/0666/19066686.jpg Details Product:General Purpose MOSFETs Configuration:Single Package / Case:TO-220F Transistor Polarity:N-Channel Drain-Source Breakdown Voltage:200 V Continuous Drain Current:9.5 A Power Dissipation:38000 mW Forward Transconductance gFS (Max / Min):5.5 S Resistance Drain-Source RDS (on):0.36 Ohm @ 10 V Typical Fall Time:72 ns Typical Rise Time:92 ns Typical Turn-Off Delay Time:70 ns Packaging:TUBE Gate-Source Breakdown Voltage: /- 30 V Maximum Operating Temperature:150 C Minimum Operating Temperature:- 55 C Type:MOSFET仙童的代理商