价 格: | 0.55 | |
品牌/商标: | FAIRCHILD/仙童 | |
型号/规格: | FDS6690 | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | SW-REG/开关电源 | |
封装外形: | SMD(SO)/表面封装 | |
材料: | N-FET硅N沟道 |
大批现货特价供应!
FDS6690 Single N-Channel Logic Level PWM Optimized PowerTrench® MOSFET
Features
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol Parameter FDS6690 Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current - Continuous (Note 1a) 10 A - Pulsed 50
PD Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.2
(Note 1c) 1
TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
RqJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
RqJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W
FDS6690 Rev.C
10 A, 30 V. RDS(ON) = 0.0135 W @ VGS = 10 V
RDS(ON) = 0.0200 W @ VGS = 4.5 V.
Optimized for use in switching DC/DC converters with
PWM controllers.
Very fast switching .
Low gate charge (Qg typ = 13 nC).
HIGH SPEED SWITCHING TRANSISTORFEATURES* Low VCE(SAT) voltage, up to 3A* Suitable for fast switching applications* High current gain"
30V P-CHANNEL POWER MOSFETDESCRIPTIONThe UT4435 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with low gatevoltages. This device is suitable for use as a load switch or inPWM applications.FEATURES* RDS(ON)≤20mΩ @VGS=-10V* RDS(ON)≤ 35mΩ @VGS=-4.5V* Low capacitance* Low gate charge* Fast switching capability* Avalanche energy specified