价 格: | 2.00 | |
品牌/商标: | Alpha/阿尔法 | |
型号/规格: | AOD452 | |
种类: | 结型(JFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
封装外形: | SMD(SO)/表面封装 | |
材料: | GE-N-FET锗N沟道 | |
开启电压: | 1(V) | |
夹断电压: | 1(V) | |
极间电容: | 1(pF) | |
低频噪声系数: | 1(dB) | |
漏极电流: | 1(mA) | |
耗散功率: | 1(mW) |
专AOD452
N-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) =25V
ID = 55 A (VGS = 10V)
RDS(ON) < 8.5 mΩ (VGS = 10V)
RDS(ON) < 14 mΩ (VGS = 4.5V)
General Description
The AOD452 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
Standard product AOD452 is Pb-free (meets ROHS &
Sony 259 specifications). AOD452L is a Green
Product ordering option. AOD452 and AOD452L are
electrically identical.
G
业263 262 252 251 223 MOS管
dzsc/19/0926/19092650.jpgAOD436N-Channel Enhancement Mode Field Effect TransistorFeaturesVDS (V) = 30VID = 60A (VGS = 10V)RDS(ON) < 7.5mΩ (VGS = 10V)RDS(ON) < 13mΩ (VGS = 4.5V)General DescriptionThe AOD436 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and lowgate resistance. This device is ideally suited for useas a high side switch in CPU core power conversion.Standard Product AOD436 is Pb-free (meets ROHS& Sony 259 specifications). AOD436L is a GreenProduct ordering option. AOD436 and AOD436L areelectrically identical.263 262 252 251 223 MOS管"
AOD414, AOD414L( Green Product )N-Channel Enhancement Mode Field Effect TransistorRev 4:Nov 2004FeaturesVDS (V) = 30VID = 85ARDS(ON) < 5.2mΩ (VGS = 10V)RDS(ON) < 7.0mΩ (VGS = 4.5V)General DescriptionThe AOD414 uses advanced trench technology toprovide excellent RDS(ON), shoot-through immunityand body diode characteristics. This device is ideallysuited for use as a low side switch in CPU corepower conversion. AOD414L ( Green Product ) isoffered in a lead-free package.G263 262 252 251 223 MOS管