价 格: | 面议 | |
品牌/商标: | IR/国际整流器 | |
型号/规格: | IRLL014TRPBF | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | MOS-HBM/半桥组件 | |
封装外形: | SMD(SO)/表面封装 | |
材料: | GE-P-FET锗P沟道 |
原装现货FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Logic-Level Gate Drive
•RDS(on) Specified at VGS = 4 V and 5 V
•Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but
has the added advantage of improved thermal performace
due to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 % Rg and UIS TestedAPPLICATIONS • DC/DC Converters
BVDSSID(DC)PDRds(on)500202800.26应用于\\====充电器,开关电源代替FAQ20N50C"