价 格: | 1.82 | |
品牌/商标: | MagnaChip(美格纳半导体) | |
型号/规格: | MDF7N60TH | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | SW-REG/开关电源 | |
封装外形: | CER-DIP/陶瓷直插 | |
材料: | N-FET硅N沟道 | |
开启电压: | 5(V) | |
跨导: | 8500(μS) | |
极间电容: | 750(pF) | |
漏极电流: | 7000(mA) | |
耗散功率: | 42000(mW) |
Brand: MagnaChip
Parts: MDF7N60TH
Package: TO-220F
Transistor Polarity:N-Channel
Features:
7.0A, 600V, RDS(on)≤1.15W@VGS= 10V
•开启延迟时间: 22ns
•关断延迟时间: 35ns
•结温范围: -55~150°C
Applications:
Power supply, PFC, High current and High Speed Switching
Features• 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V• Low gate charge ( typical 30 nC)• Low Crss ( typical 11 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability
• VDS=950V • ID=4.0A• 导通电阻:R<3.5Ω• 总耗散功率:25W• 工作温度范围:-50 ~ 150°C