| 价 格: | 0.85 | |
| 品牌/商标: | FAIRCHILD/仙童 | |
| 型号/规格: | MBR10100CT | |
| 种类: | 绝缘栅(MOSFET) | |
| 沟道类型: | N沟道 | |
| 导电方式: | 增强型 | |
| 封装外形: | SMD(SO)/表面封装 | |
| 材料: | IGBT绝缘栅比极 |
华星公司直供ON、MHCHXM、FAIRCHILD、强茂品牌的肖特基,封装:TO-220/TO-220F,全系列MBR1060、MBR10100、MBR10150、MBR10200.、MBR2045...........MBR30200......品质保证,性价比极高,欢迎中间商、工厂的朋友来电洽谈!
"华 矽 电 子 代 理一、 通嘉PWM IC:LD7535、LD7575、LD7531、LD7536高功率因数校正的LD7591、LD7830二、 LED驱动方案:单级PFC MT7930、MT7953、MT7955MT7950、MT7201C 、MT7281SMD802(代替9910)、TT938(代替2808)、SMD630(代替6562)、SMD302、三、 LED可控硅调光方案:2101、2102、2103四、 FAIRCHILD、IR、TS、SL、UTC的MOS管:2N60、5N50、5N60、8N60、10N60、12N60、13N50、18N50、20N50、20N60、40N120五、 肖特基:MBR1060…MBR10200、MBR2045...MBR20200、MBR30100…MBR40100全系列欢迎新老朋友们来电洽谈!电话:0755-33234209手机:13603026815联系人:陈先生"
HEXFET® Power MOSFETl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supplyl High speed power switchingBenefitsApplicationsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalanche Voltage and Currentl Effective Coss specified ( See AN1001)VDSS Rds(on) max ID500V 0.27W 20ATypical SMPS Topologies:l Full Bridgel PFC BoostG D SParameter Max. UnitsID @ TC = 25°C Continuous Drain Current, VGS @ 10V 20ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 13 AIDM Pulsed Drain Current 80PD @TC = 25°C Power Dissipation 280 WLinear Derating Factor 2.2 W/°CVGS Gate-to-Source Voltage ± 30 Vdv/dt Peak Diode Recovery dv/dt 3.8 V/nsTJ Operating Junction and -55 to 150TSTG Storage Temperature RangeSoldering Temperature, for 10 seconds 300 (1.6mm from case )°CMounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)Absolute Maximum RatingsNotes through are o...