价 格: | 面议 | |
品牌: | FAIRCHILD/仙童 | |
型号: | HGTG18N120BND | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | O/振荡 | |
封装外形: | CER-DIP/陶瓷直插 | |
材料: | SIT静电感应 | |
开启电压: | 1(V) | |
夹断电压: | 1(V) | |
跨导: | 1(μS) | |
极间电容: | 1(pF) | |
低频噪声系数: | 1(dB) | |
漏极电流: | 1(mA) | |
耗散功率: | 1(mW) |
仙童 MOS IGBT 场效应管
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仙童 飞兆 Fairchild代理Manufacturer:Fairchild Semiconductor Product Category:IGBT Transistors RoHS:dzsc/19/0034/19003404.jpg Details Package / Case:TO-220 Collector- Emitter Voltage VCEO Max:390 V Collector-Emitter Breakdown Voltage:400 V Collector-Emitter Saturation Voltage:1.25 V Maximum Gate Emitter Voltage:10 V Continuous Collector Current Ic Max:21 A Gate-Emitter Leakage Current:150 W Power Dissipation:150 W Packaging:Tube Configuration:Single Mounting Style:Through Hole
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