价 格: | 面议 | |
漏极电流: | 7.2A | |
封装外形: | SMD(SO)/表面封装 | |
型号/规格: | AON5802,双N,DFN 2X5,30V 7.2A/30V 7.2A 2,0.02Ω | |
材料: | N-FET硅N沟道 | |
品牌/商标: | AO | |
沟道类型: | N沟道 | |
种类: | 绝缘栅(MOSFET) | |
夹断电压: | 12 | |
导电方式: | 增强型 | |
极间电容: | 1115 |
产品型号:AON5802
封装:DFN 2X5
源漏极间雪崩电压V(br)dss(V):30
夹断电压VGS(V):±12
漏极电流Id(A):7.2
源漏极导通电阻rDS(on)(Ω):0.02 @VGS = 4.5V
开启电压VGS(TH)(V):1.5
功率PD(W):1.7
极间电容Ciss(PF):1115
通道极性:双N
低频跨导gFS(s):37
单脉冲雪崩能量EAS(mJ):
温度(℃): -55 ~150
描述:30V,7.2A Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
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