场效应管 BSC010NE2LS G,010NE2LS
| 价 格： | 面议 | |
| 品牌/商标： | INFINEON/英飞凌 | |
| 型号/规格： | BSC010NE2LSG,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,25V,100A,0.001Ω | |
| 种类： | 绝缘栅(MOSFET) | |
| 沟道类型： | N沟道 | |
| 导电方式： | 增强型 | |
| 用途： | S/开关 | |
| 封装外形： | SMD(SO)/表面封装 | |
| 材料： | N-FET硅N沟道 |
BSC010NE2LSG,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,25V,100A,0.001Ω
dzsc/18/9942/18994272.jpg
BSC010NE2LSG,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,25V,100A,0.001Ω
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 方卫贤
- 电话：0755-82814431
- 传真：0755-82814431
- 手机：
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场效应管 MDP15N60G MDP15N60
信息内容：dzsc/18/9946/18994681.jpgMDP15N60TH，TO-220，MagnaChip/美格纳，DIP/MOS，N场，600V，15A， General DescriptionThese N channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance,high switching performance and excellent quality.These devices are suitable device for SMPS,high Speed switching and general purpose applications. FeaturesVDS=600V ID=15A @ VGS=10VRDS(ON) ≤ 0.40E @ VGS = 10VApplicationsPower SupplyPFCHigh Current, High Speed Switching"
供应场效应管 FDU8796,FDU8780,FDU8782
信息内容：<友情提示>具体价格视当天市场行情而定.买家请通过电话或贸易通在线联系，以确定当日市场价格。以免造成双方的误会与纠纷，谢谢您！全新!价格优惠!现货供应! 以优势说话MOS管，广泛应用于电池充电器，普通电源，智能开关电源FAIRCHILD MOSFET场效应管系列:FDP6670AL,FQD12P10,FDU6680 ,FDS6685,FDS6688FDS7066SN3,FDD8896,FQU11P06,NDC652,SFR9224FDD6680 ,ISL9N312,NDS9435,FDS6990A,FQP4N20SFS9634,FDB667,FDS6676AS,FDB6670A,HUF76107RFD16N05,FDS7064N,FQD2N50,FQD5N20,NDS9435AFDS7760A,FDU8896,FDD6670,SFR9310,FDD6680FDD6680A,FQD13N06,FQD3P50,FQPF3N50,ISL9N308FDD8447,FQD60N03L-422,D15P05,FDD16AN08FDD6630,FQD60N03,FQP60N03,RFD3055,IRFS654SDB75N03,FQD20N06,FDS6990A ,FDS8958A,HUF76129ISL9N308AD3ST,FDB8870 ,FDD6296,FDD8878,FDB8896D10P05,FDB7030,FDB8860,FQPF19N10,NDB603FDP047AN08AO,HUF76419,FDU8896-609,FQP17N40FDS6982S,FDS9926A,ISL9N312AD3ST,FQB140N03FQB34N20,NDB6030,IRL610,HUF76409D3,RFP45N03LFDD6030L,FDS6688 ,FDD120AN15,FDB6035,SFR9224TMISL9N304,FDS4435,IRF630,RFP70N03,FDD6030FQD24N08,SSU2N60,IRFS654B定型脚,ISL9N...
