| 价 格: | 1.00 | |
| 品牌: | IR/国际整流器 | |
| 型号: | IRLL024N | |
| 种类: | 绝缘栅(MOSFET) | |
| 沟道类型: | N沟道 | |
| 导电方式: | 耗尽型 | |
| 用途: | MOS-HBM/半桥组件 | |
| 封装外形: | SMD(SO)/表面封装 | |
| 材料: | GaAS-FET砷化镓 | |
| 开启电压: | 30(V) | |
| 夹断电压: | 30(V) | |
| 跨导: | 30(μS) | |
| 极间电容: | 45(pF) | |
| 低频噪声系数: | 45(dB) | |
| 漏极电流: | 45(mA) | |
| 耗散功率: | 45(mW) |
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