价 格: | 面议 | |
品牌/商标: | 国产 | |
型号/规格: | 2N6507 | |
控制方式: | 单向 | |
极数: | 三极 | |
封装材料: | 塑料封装 | |
封装外形: | TO-220 | |
关断速度: | 普通 | |
散热功能: | 带散热片 | |
频率特性: | 低频 | |
功率特性: | 小功率 | |
额定正向平均电流: | 4(A) | |
控制极触发电流: | 10-30(mA) | |
反向重复峰值电压: | 600(V) |
标准单向可控硅 欢迎来电查询.
. designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
• Sensitive Gate Triggering Uniquely Compatible for Direct Coupling to TTL, HTL,
CMOS and Operational Amplifier Integrated Circuit Logic Functions
• Gate Triggering 4 Mode — 2N6071A,B, 2N6073A,B, 2N6075A,B
• Blocking Voltages to 600 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
TRIACs
4 AMPERES RMS
200 thru 600 VOLTS
供应微触发单向可控硅 欢迎来电查询. 特点:1.主要用于漏电子保护器及其他电子设备的保护及控制电路.2.采用 N 型 NTD 硅单晶片,表面玻璃钝化平面工艺制作.3.断态峰值电压高,低的 VTM及离散性小的 IGT.。 QUICK REFERENCEPart Number IT(RMS)(A) VDRM/ VRRM(V) IGT(Max.)(μA) Package PackingC106B 200C106D 400C106D1 400C106M 600C106M1 4 600 200 TO-126 50 / Tube 500 / Bulk
广泛用于各种开关器、小型马达控制器、彩灯控制器、漏电保护器、灯具继电器/激励器、逻辑集成电路驱动、大功率可控硅门极驱动、摩托车点火器等线路功率控制。