| 价 格: | 5.00 | |
| 品牌: | INFINEON/英飞凌 | |
| 型号: | SGB30N60 | |
| 种类: | 绝缘栅(MOSFET) | |
| 沟道类型: | N沟道 | |
| 导电方式: | 增强型 | |
| 用途: | MOS-FBM/全桥组件 | |
| 封装外形: | P-DIT/塑料双列直插 | |
| 材料: | IGBT绝缘栅比极 | |
| 开启电压: | 30(V) | |
| 夹断电压: | 3(V) | |
| 低频跨导: | 24(μS) | |
| 极间电容: | 1500(pF) | |
| 低频噪声系数: | 24(dB) | |
| 漏极电流: | 5000(mA) | |
| 耗散功率: | 5000(mW) |
INFINEON SGB30N60INFINEON SGB30N60INFINEON SGB30N60INFINEON SGB30N60V
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