价 格: | 面议 | |
品牌/商标: | INFINEON/英飞凌 | |
型号/规格: | SPW35N60C3 TO-247 | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | MOS-FBM/全桥组件 | |
封装外形: | CER-DIP/陶瓷直插 | |
材料: | GE-N-FET锗N沟道 | |
低频跨导: | 50(μS) | |
极间电容: | 4500(pF) | |
耗散功率: | 0.313(mW) |
CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv /dt rated
• Ultra low effective capacitances
• Improved transconductance
dzsc/18/8783/18878322.jpg
FEATURESz High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA)z Complimentary to 2SD596.dzsc/18/8788/18878816.jpgdzsc/18/8788/18878816.jpg"
Features·With TO-220AB package·Glass passivated, sensitive gate triacs in aplastic envelope, intended for use in generalpurpose bidirectional switching and phasecontrol applications, where high sensitivityis required in all four quadrants.