价 格: | 0.10 | |
品牌/商标: | UTC/友顺 | |
型号/规格: | 2N70 | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | SW-REG/开关电源 | |
封装外形: | SMD(SO)/表面封装 | |
材料: | IGBT绝缘栅比极 |
2 Amps, 700 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N70 is a high voltage MOSFET designed to have
better characteristics, such as fast switching time, low gate charge,
low on-state resistance and high rugged avalanche characteristics.
This power MOSFET is usually used at high speed switching
applications in power supplies, PWM motor controls, high efficient
DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) =6.3Ω@VGS= 10V
* Ultra Low gate charge (typical 8.1nC)
* Low reverse transfer capacitance (CRSS = typical 5.0 pF)
* Fast switching capability
DESCRIPTIONThe UTC UTD454 is an N-channel enhancement MOSFETproviding perfect RDS(ON) and low gate charge with UTC advancedtechnology.The UTC UTD454 is intended for being used in PWM, loadswitching and general purpose applications. FEATURES* RDS(ON)< 33 mΩ @VGS = 10V* RDS(ON)< 47 mΩ @VGS = 4.5V* VDS (V) = 40V* ID = 12 A @VGS = 10V* Low gate charge"
N-CHANNEL ENHANCEMENT MODEDESCRIPTIONAs advanced N-channel logic level MOSFET, the UT108N03 isproduced using UTC’s advanced trench technology, which hasbeen specially tailored to minimize the on-resistance and maintainlow gate charge for superior switching performance.FEATURES* RDS(ON) = 6.0mΩ @VGS = 10 V* Low capacitance* Optimized gate charge* Fast switching capability* Avalanche energy specified"