ES1D仙童
| 价 格： | 面议 | |
| 封装外形： | CER-DIP/陶瓷直插 | |
| 型号/规格： | ES1D | |
| 材料： | ALGaAS铝镓砷 | |
| 用途： | NF/音频(低频) | |
| 品牌/商标： | FAIRCHILD/仙童 | |
| 沟道类型： | N沟道 | |
| 种类： | 绝缘栅(MOSFET) | |
| 导电方式： | 增强型 |
原装，现货热卖
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- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 杨宝林
- 电话：755-88250321
- 传真：755-88250321
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现货热销仙童FQP85N06
信息内容：FSC FAIRCHILD IC 半导体 电子Manufacturer:Fairchild Semiconductor Product Category:MOSFETs RoHS:dzsc/18/8775/18877573.jpg Details Product:General Purpose MOSFETs Configuration:Single Package / Case:TO-220 Transistor Polarity:N-Channel Drain-Source Breakdown Voltage:60 V Continuous Drain Current:85 A Power Dissipation:160000 mW Forward Transconductance gFS (Max / Min):54 S Resistance Drain-Source RDS (on):0.01 Ohm @ 10 V Typical Fall Time:170 ns Typical Rise Time:230 ns Typical Turn-Off Delay Time:175 ns Packaging:Tube Gate-Source Breakdown Voltage: /- 25 V Maximum Operating Temperature:175 C Minimum Operating Temperature:- 55 C Type:MOSFET "
现货热销FSC FQA11N90C
信息内容：FSC FAIRCHILD IC 半导体 电子Manufacturer:Fairchild Semiconductor Product Category:MOSFETs Product:General Purpose MOSFETs Configuration:Single Package / Case:TO-3P Transistor Polarity:N-Channel Drain-Source Breakdown Voltage:900 V Continuous Drain Current:11 A Power Dissipation:300000 mW Resistance Drain-Source RDS (on):1.4 Ohm @ 10 V Typical Fall Time:85 ns Typical Rise Time:130 ns Typical Turn-Off Delay Time:130 ns Packaging:Tube Gate-Source Breakdown Voltage:30 V Maximum Operating Temperature:150 C Minimum Operating Temperature:- 55 C友情提示：网上报价仅供参考！订货前需电话确认！"
