价 格: | 面议 | |
品牌: | FAIRCHILD/仙童 | |
型号: | HGTP7N60A4 | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | NF/音频(低频) | |
封装外形: | CER-DIP/陶瓷直插 | |
材料: | SIT静电感应 | |
开启电压: | 1(V) | |
夹断电压: | 1(V) | |
跨导: | 1(μS) | |
极间电容: | 1(pF) | |
低频噪声系数: | 1(dB) | |
漏极电流: | 1(mA) | |
耗散功率: | 1(mW) |
FSC FAIRCHILD IC 半导体 电子
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仙童 飞兆 Fairchild代理Manufacturer:Fairchild Semiconductor Product Category:Rectifiers RoHS:dzsc/18/8761/18876129.jpg Details Configuration:Single Reverse Voltage:600 V Package / Case:TO-220AC Recovery Time:35 ns Forward Voltage:2.1 V Forward Continuous Current:8 A Max Surge Current:100 A Reverse Current IR:100 uA Power Dissipation:75 W Product:Ultra Fast Recovery Rectifier Packaging:Tube友情提示:网上报价仅供参考!订货前需电话确认!"
仙童 飞兆 Fairchild代理Manufacturer:Fairchild Semiconductor Product Category:MOSFETs RoHS:dzsc/18/8761/18876158.jpg Details Product:General Purpose MOSFETs Package / Case:TO-220F Transistor Polarity:N-Channel Drain-Source Breakdown Voltage:500 V Continuous Drain Current:8 A Power Dissipation:58 W Forward Transconductance gFS (Max / Min):25 S Resistance Drain-Source RDS (on):0.265 Ohms Packaging:Tube Gate-Source Breakdown Voltage: /- 30 V "