价 格: | 2.35 | |
品牌/商标: | IPS | |
型号/规格: | FTP08N06A | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | S/开关 | |
封装外形: | CER-DIP/陶瓷直插 | |
材料: | GE-N-FET锗N沟道 | |
开启电压: | 55 | |
漏极电流: | 120000 |
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N-Channel MOSFET©2009 InPower Semiconductor Co., Ltd. FTP08N06A REV. A Nov. 2009FTP08N06APage 1 of 11• Automotive• DC Motor Control• Class D Amplifier• Uninterruptible Power Supply (UPS)• RoHS Compliant• Low ON Resistance• Low Gate Charge• Peak Current vs Pulse Width Curve• Inductive Switching CurvesLead Free Package and FinishVDSS RDS(ON) (Max.) ID55V/120A
原装!Synchronous MOSFET for NotebookProcessor PowerSynchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking SystemsTop ViewSO-8VDSS RDS(on) max Qg30V 4.0m @VGS = 10V 34nCVery Low RDS(on) at 4.5V VGSUltra-Low Gate ImpedanceFully Characterized Avalanche Voltageand Current20V VGS Max. Gate Rating100% tested for Rg"