无锡固电ISC 供应BD912 三极管 达林顿三极管 增强型MOS管
| 价 格： | 2.70 | |
| 是否提供加工定制： | 是 | |
| 品牌/商标： | ISC | |
| 型号/规格： | BD912 | |
| 应用范围： | 功率 | |
| 材料： | 硅(Si) | |
| 极性： | PNP型 | |
| 集电极允许电流ICM： | -20（A） | |
| 集电极耗散功率PCM： | 90（W） | |
| 截止频率fT： | 3（MHz） | |
| 结构： | 平面型 | |
| 封装形式： | 直插型 | |
| 封装材料： | 塑料封装 |
供应BD912三极管TO-220,有意者请联系！
DESCRIPTION
·DC Current Gain -
: hFE= 40@IC= -0.5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -100V(Min)
·Complement to Type BD911
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -100 | V |
VCEO | Collector-Emitter Voltage | -100 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -15 | A |
ICM | Collector Current-Peak | -20 | A |
IB | Base Current | -5 | A |
PC | Collector Power Dissipation @ TC=25℃ | 90 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -65~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | MAX | UNIT |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= -50mA ;IB= 0 | -100 |
| V |
VCE(sat)-1 | Collector-Emitter Saturation Voltage | IC= -5A; IB= -0.5A |
| -1.0 | V |
VCE(sat)-2 | Collector-Emitter Saturation Voltage | IC= -10A; IB= -2.5A |
| -3.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= -10A; IB= -2.5A |
| -2.5 | V |
VBE(on) | Base-Emitter On Voltage | IC= -5A ; VCE= -4V |
| -1.5 | V |
ICBO | Collector Cutoff Current | VCB= -100V;IE= 0 |
| -0.5 | mA |
ICEO | Collector Cutoff Current | VCE= -50V;IB= 0 |
| -1.0 | mA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
| -1.0 | mA |
hFE-1 | DC Current Gain | IC= -0.5A ; VCE= -4V | 40 | 250 |
|
hFE-2 | DC Current Gain | IC= -5A ; VCE= -4V | 15 | 150 |
|
hFE-3 | DC Current Gain | IC= -10A ; VCE= -4V | 5 |
|
|
fT | Current-Gain—Bandwidth Product | IC= -0.5A ; VCE= -4V; ftest= 1.0MHz | 3.0 |
| MHz |
- 所属城市：江苏 无锡
- [联系时请说明来自维库仪器仪表网]
- 联系人： 谈增琴
- 电话：0510-85346980
- 传真：0510-85346750
- 手机：
- QQ ：
无锡固电ISC 供应2N6302 三极管 直插三极管 增强型MOS管
信息内容：DESCRIPTION ·Excellent Safe Operating Area·HighDC Current Gain-: hFE=15-60@IC= 8A·Low Saturation Voltage-: VCE(sat)= 1.0V(Max)@ IC= 10A APPLICATIONS·Designed for use in high power audio amplifier applicationsand high voltage switching regulator circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage140VVCEOCollector-Emitter Voltage140VVEBOEmitter-Base Voltage7VICCollector Current-Continuous16AICMCollector Current-Peak20AIBBase Current-Continuous5APCCollector Power Dissipation @TC=25℃150WTJJunction Temperature200℃TstgStorage Temperature-65~200℃ THERMAL CHARACTERISTICSSYMBOLPARAMETERMAXUNITRth j-cThermal Resistance,Junction to Case0.875℃/W ELECTRICAL CHARACTERISTICS TC=25℃unless otherwise specified SYMBOLPARAMETERCONDITIONSMINMAXUNITVCEO(SUS)Collector-Emitter Sustaining VoltageIC= 100mA; IB= 0140 VVCE(sat)-1Collector-Emitter Saturation VoltageIC= 10A; IB= 1A 1.0VVCE(sa...
