Philips Semiconductors Product specification
N-channel enhancement mode IRFZ44N
TrenchMOSTM transistor
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
standard level field-effect power
transistor in a plastic envelope using VDS Drain-source voltage 55 V
’trench’ technology. The device ID Drain current (DC) 49 A
features very low on-state resistance Ptot Total power dissipation 110 W
and has integral zener diodes giving Tj Junction temperature 175 °C
ESD protection up to 2kV. It is RDS(ON) Drain-source on-state 22 mW
intended for use in switched mode resistance VGS = 10 V
power supplies and general purpose
switching applications.
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage - - 55 V
VDGR Drain-gate voltage RGS = 20 kW - 55 V
±VGS Gate-source voltage - - 20 V
ID Drain current (DC) Tmb = 25 °C - 49 A
ID Drain current (DC) Tmb = 100 °C - 35 A
IDM Drain current (pulse peak value) Tmb = 25 °C - 160 A
Ptot Total power dissipation Tmb = 25 °C - 110 W
Tstg, Tj Storage & operating temperature - - 55 175 °C
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VC Electrostatic discharge capacitor Human body model - 2 kV
voltage, all pins (100 pF, 1.5 kW)
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-mb Thermal resistance junction to - - 1.4 K/W
mounting base
Rth j-a Thermal resistance junction to in free air 60 - K/W
ambient
d
g
1 2 3 s
tab
February 1999 1 Rev 1.000
Philips Semiconductors Product specification
N-channel enhancement mode IRFZ44N
TrenchMOSTM transistor
STATIC CHARACTERISTICS
Tj= 25°C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 55 - - V
voltage Tj = -55°C 50 - - V
VGS(TO) Gate threshold voltage VDS = VGS; ID = 1 mA 2.0 3.0 4.0 V
Tj = 175°C 1.0 - - V
Tj = -55°C - - 4.4
IDSS Zero gate voltage drain current VDS = 55 V; VGS = 0 V; - 0.05 10 mA
Tj = 175°C - - 500 mA
IGSS Gate source leakage current VGS = ±10 V; VDS = 0 V - 0.04 1 mA
Tj = 175°C - - 20 mA
±V(BR)GSS Gate source breakdown voltage IG = ±1 mA; 16 - - V
RDS(ON) Drain-source on-state VGS = 10 V; ID = 25 A - 15 22 mW
resistance Tj = 175°C - - 42 mW
DYNAMIC CHARACTERISTICS
Tmb = 25°C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
gfs Forward transconductance VDS = 25 V; ID = 25 A 6 - - S
Ciss Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1350 1800 pF
Coss Output capacitance - 330 400 pF
Crss Feedback capacitance - 155 215 pF
Qg Total gate charge VDD = 44 V; ID = 50 A; VGS = 10 V - - 62 nC
Qgs Gate-cource charge - - 15 nC
Qgd Gate-drain (miller) charge - - 26 nC
td on Turn-on delay time VDD = 30 V; ID = 25 A; - 18 26 ns
tr Turn-on rise time VGS = 10 V; RG = 10 W - 50 75 ns
td off Turn-off delay time Resistive load - 40 50 ns
tf Turn-off fall time - 30 40 ns
Ld Internal drain inductance Measured from contact screw on - 3.5 - nH
tab to centre of die
Ld Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH
from package to centre of die
Ls Internal source inductance Measured from source lead 6 mm - 7.5 - nH
from package to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25°C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IDR Continuous reverse drain - - 49 A
current
IDRM Pulsed reverse drain current - - 160 A
VSD Diode forward voltage IF = 25 A; VGS = 0 V - 0.95 1.2 V
IF = 40 A; VGS = 0 V - 1.0 -
trr Reverse recovery time IF = 40 A; -dIF/dt = 100 A/ms; - 47 - ns
Qrr Reverse recovery charge VGS = -10 V; VR = 30 V - 0.15 - mC
February 1999

冠优电子优势代理、分销VISHAY（美国威世）、FAIRCHILD（仙童）、IR（美国国际整流器）、BCD、COSMO（台湾冠西）、NXP（恩智浦） 、INFINEON（英飞凌） 、ATMEL（爱尔梅特）、LINEAR（凌力尔特） 、AOS（万代）、ST（意法半导体）、ON（安森美半导体）、TI（德州） 、TOSHIBA（东芝）、PANASONI （松下） 、AVX、SST、ISSI等世界高品质电子元器件。 主要产品线有：钽电容、二极管、三极管、场效应管、MOSFET管、IGBT、肖特基、快恢复管、瞬变二极管、稳压二极管、可控硅、整流桥、光藕、电源IC、稳压IC、单片机IC、74系列IC、存储芯片、通信IC等電子元器件、同时为生产厂家、科研单位院校提供电子元器件的配套，配套业务有着丰富的经验和的素质，高度的敬业精神，能为客戶提供烧录芯片等优质服务。 产品广泛应用于：<1>电源类产品：开关电源、不间断电源UPS、电源转换器AC/DC、DC/DC、充电器等 <2> 消费电子类产品：手机、蓝牙、上网卡、对讲机、无绳电话、数码相机、电脑、路由器、集线器、Hubs、显示器、电磁炉、音响、DVD/VCD、DVD刻录机、机顶盒、MP3/MP4、电纸书等 <3>汽车电子类产品:HID安定器、汽车电子、汽车音响、车载DVD、汽车导航系统、汽车防盗器等 <4>照明电子类产品:节能灯、LED恒流电源、电子镇流器<5>电机及工控设备类产品:电焊机、电动车、电机控制设备、医疗器械、仪器仪表、楼宇自控、监控设备等等…… 成为“货更好，价更平，服务更优”的供应商是我们坚持不懈的追求，我们以严谨守约的一贯作风，将“坚守原装正品，坚守薄利多销、坚守诚信守约”为宗旨贯穿于每笔业务之中,你们的满意就是我们的成功、我们衷心期望与广大客户合作成功，携手共进......