价 格: | 面议 | |
品牌/商标: | TRINNO | |
型号/规格: | TMU5N50G | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | NF/音频(低频) | |
封装外形: | CER-DIP/陶瓷直插 | |
材料: | SIT静电感应 |
本公司韩国TRINNO的一级代理商,全力致力于TRINNO的MOSFET的推广 性比价优于美格纳,及国内知名的士兰微,目前三星,LG多在批量使用,可以申请样品测试。
仙童 飞兆 Fairchild代理Manufacturer:Fairchild Semiconductor Product Category:MOSFETs RoHS:dzsc/18/8706/18870664.jpg Details Product:General Purpose MOSFETs Configuration:Single Package / Case:TO-220 Transistor Polarity:P-Channel Drain-Source Breakdown Voltage:200 V Continuous Drain Current:6.5 A Power Dissipation:70000 mW Forward Transconductance gFS (Max / Min):4.2 Resistance Drain-Source RDS (on):0.8 Ohm @ 10 V Typical Fall Time:17 ns Typical Rise Time:22 ns Typical Turn-Off Delay Time:41 ns Packaging:Tube Gate-Source Breakdown Voltage:+ /- 30 V Maximum Operating Temperature:150 C Minimum Operating Temperature:- 55 C Type:MOSFET
仙童 MOS IGBT 场效应管Manufacturer:Fairchild Semiconductor Product Category:Rectifiers RoHS:dzsc/18/8706/18870669.jpg Details Configuration:Dual Common Cathode Reverse Voltage:400 V Termination Style:Through Hole Package / Case:TO-3P Recovery Time:50 ns Forward Voltage:1.4 V Forward Continuous Current:20 A Max Surge Current:200 A Reverse Current IR:50 uA Product:Ultra Fast Recovery Rectifier Packaging:Tube"