价 格: | 1.95 | |
品牌/商标: | TOSHIBA/东芝 | |
型号/规格: | K10A60D | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | CC/恒流 | |
封装外形: | CER-DIP/陶瓷直插 | |
材料: | GaAS-FET砷化镓 |
产品型号: | TK10A60D | 产品名称: | ||||||||||||||||||||||||||||
品牌/产地: | 东芝半导体公司 | 封装规格: | TO-220SIS | |||||||||||||||||||||||||||
产品描述: | 功率MOSFET (N沟 500V... | |||||||||||||||||||||||||||||
是否含铅: | 未知 | |||||||||||||||||||||||||||||
PDF分类: | 非IC器件 > 分立器件 > 晶体管 | |||||||||||||||||||||||||||||
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IR Part #RecommendedIR Part #DescriptionPartStatusReplacementTypeIRLR9343PBFIRLR9343PBFMOSFET, P-CHANNEL, -55V, -20A, 105 mOhm, 31 nC Qg, Logic Level, D-PakActiveDIRECTSpecificationsParameterValuePackage D-PakCircuit DiscreteVBRDSS (V) -55VGs Max (V) 20RDS(on) Max 4.5V (mOhms) 170.0RDS(on) Max 10V (mOhms) 105.0ID @ TC = 25C (A) -20ID @ TC = 100C (A) -14Qg Typ (nC) 31.0Qgd Typ (nC) 8.5Rth(JC) (C/W) 1.9Power Dissipation @ TC = 25C (W) 79Part Status ActiveEnvironmental Options Available PbF and LeadedPackage Class Can Surface Mount with Leads
FDP12N60NZ / FDPF12N60NZN-Channel MOSFET?600V, 12A, 0.65?Features• RDS(on) = 0.53? ( Typ.)@ VGS = 10V, ID = 6A• Low gate charge ( Typ. 26nC)• Low Crss ( Typ. 12pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• ESD Improved capability• RoHS compliantDescriptionThese N-Channel enhancement mode power field effect transistorsare produced using Fairchild’s proprietary, planar stripe,DOMS technology.This advance technology has been especially tailored to minimizeon-state resistance, provide superior switching performance,and withstand high energy pulse in the avalanche andcommutationmode. These devices are well suited for high efficientswitched mode power supplies and active power factor correction.