价 格: | 6.65 | |
封装外形: | SP/特殊外形 | |
型号/规格: | SPA15N60C3 | |
材料: | GE-N-FET锗N沟道 | |
用途: | L/功率放大 | |
品牌/商标: | INFINEON/英飞凌 | |
沟道类型: | N沟道 | |
种类: | 绝缘栅(MOSFET) | |
导电方式: | 增强型 | |
属性: | 属性值 |
Cool MOS™ Power Transistor
VDS@ Tjmax 650 V
RDS(on) 0.28 ?
ID 15 A
Feature
• New revolutionary high voltage technology
•Ultra low gate charge
• Periodic avalanche rated
•Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
•PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
FairChild, FDP060AN08A0, 75V, 80A, 6.0m?, rDS(ON) = 4.8m? (Typ.), VGS= 10V, ID = 80AQg(tot) = 73nC (Typ.), VGS= 10VLow Miller ChargeLow QRR Body DiodeUIS Capability (Single Pulse and Repetitive Pulse)Qualified to AEC Q101 dzsc/18/8773/18877323.jpg"
FairChild, FGH40N60UFD, 600A, 40V, IGBT, High current capabilityLow saturation voltage: VCE(sat)=1.8V @ IC = 40AHigh input impedanceFast switching RoHS compliant dzsc/19/0034/19003493.jpg