价 格: | 8.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | iscsemi | |
型号/规格: | 2N3447 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | N/P型 | |
击穿电压VCBO: | 60(V) | |
集电极允许电流ICM: | 7.5(A) | |
集电极耗散功率PCM: | 115(W) | |
结构: | 平面型 | |
封装形式: | to-3 | |
封装材料: | 金属封装 |
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-hFE= 40-120@ IC= 5A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ IC= 5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 60V(Min)
APPLICATIONS
·Designed for switching and amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 80 | V |
VCEO | Collector-Emitter Voltage | 60 | V |
VEBO | Emitter-Base Voltage | 6 | V |
IC | Collector Current-Continuous | 7.5 | A |
IB | Base Current-Continuous | 4 | A |
PC | Collector Power Dissipation@TC=25℃ | 115 | W |
TJ | Junction Temperature | 200 | ℃ |
Tstg | Storage Temperature | -65~200 | ℃ |
"
DESCRIPTION·High DC Current Gain-: hFE= 1000(Min)@IC= -3A·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= -80V(Min)·Low Collector-Emitter Saturation Voltage-:VCE(sat)= -2.0V(Max)@ IC= -3A= -4.0V(Max)@ IC= -5A·Complement to Type TIP121 APPLICATIONS·Designed for general purpose amplifier and low speedswitching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-80VVCEOCollector-Emitter Voltage-80VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous-5AICMCollector Current-Peak-8AIBBase Current-DC-120mAPCCollector Power DissipationTC=25℃65WCollector Power DissipationTa=25℃2TjJunction Temperature150℃TstgStorageTemperature Range-65~150℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITVCEO(SUS)Collector-Emitter Sustaining VoltageIC= -0.1A, IB= 0-80 VVCE(sat)-1Collector-Emitter Saturation VoltageIC= -3A, IB= -12mA -2.0VVCE(sat)-2Collector-Emitter ...
供应三极管BU109,TO-3,有意者请联系!"